A compact model of MOSFET mismatch for circuit design
Fecha
2005Materia
Abstract
This paper presents a compact model for MOS transistor mismatch. The mismatch model uses the carrier number fluctuation theory to account for the effects of local doping fluctuations along with an accurate and compact dc MOSFET model. The resulting matching model is valid for any operation condition, from weak to strong inversion, from the linear to the saturation region, and allows the assessment of mismatch from process and geometric parameters. Experimental results from a set of transistors ...
This paper presents a compact model for MOS transistor mismatch. The mismatch model uses the carrier number fluctuation theory to account for the effects of local doping fluctuations along with an accurate and compact dc MOSFET model. The resulting matching model is valid for any operation condition, from weak to strong inversion, from the linear to the saturation region, and allows the assessment of mismatch from process and geometric parameters. Experimental results from a set of transistors integrated on a 0.35 m technology confirm the accuracy of our mismatch model under various bias conditions. ...
En
IEEE journal of solid-state circuits. New York, N. Y. vol. 40, no. 8 (Aug. 2005), p. 1649-1657
Origen
Estranjero
Colecciones
-
Artículos de Periódicos (39333)Ingeniería (2403)
Este ítem está licenciado en la Creative Commons License
![](/themes/Mirage2Novo//images/lume/cc.png)