Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures
Fecha
2022Autor
Materia
Abstract
n-GaN/ AlN heterostructures were grown by molecular beam epitaxy on Si(111)substrates.The GaN films were n-type doped with silicon and the effect of doping concentration on the structural and optical properties was studied. Si doping promotes a reduction of dislocation density as revealed by x-ray data analysis and Transmission Electron Microscopy. Furthermore, a decrease in the yellow band measured by Photoluminescence Spectroscopy was observed when silicon doping concentration was increased u ...
n-GaN/ AlN heterostructures were grown by molecular beam epitaxy on Si(111)substrates.The GaN films were n-type doped with silicon and the effect of doping concentration on the structural and optical properties was studied. Si doping promotes a reduction of dislocation density as revealed by x-ray data analysis and Transmission Electron Microscopy. Furthermore, a decrease in the yellow band measured by Photoluminescence Spectroscopy was observed when silicon doping concentration was increased up to 1.7 × 1019 atoms cm−3 . A particular mosaic structure was induced by the Si doping as inferred from Rutherford Backscattering measurements. The crystal quality shows a small degradation for very heavily doped samples(1.3 × 1020 atoms cm−3 ). ...
En
Materials Research Express. Bristol. Vol. 9, no. 6 (June 2022), 065903, 8 p.
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