Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures
dc.contributor.author | Zambrano-Serrano, Mario Alberto | pt_BR |
dc.contributor.author | Hernandez-Gutierrez, Carlos Alberto | pt_BR |
dc.contributor.author | Melo, Osvaldo de | pt_BR |
dc.contributor.author | Behar, Moni | pt_BR |
dc.contributor.author | Gallardo-Hernández, Salvador | pt_BR |
dc.contributor.author | Casallas-Moreno, Yenny Lucero | pt_BR |
dc.contributor.author | Ponce, Arturo | pt_BR |
dc.contributor.author | Hernandez-Robles, Andrei | pt_BR |
dc.contributor.author | Uribe, Daniel Bahena | pt_BR |
dc.contributor.author | Yee-Rendon, Cristo | pt_BR |
dc.contributor.author | López-López, Maximo | pt_BR |
dc.date.accessioned | 2022-10-03T04:48:53Z | pt_BR |
dc.date.issued | 2022 | pt_BR |
dc.identifier.issn | 2053-1591 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/249596 | pt_BR |
dc.description.abstract | n-GaN/ AlN heterostructures were grown by molecular beam epitaxy on Si(111)substrates.The GaN films were n-type doped with silicon and the effect of doping concentration on the structural and optical properties was studied. Si doping promotes a reduction of dislocation density as revealed by x-ray data analysis and Transmission Electron Microscopy. Furthermore, a decrease in the yellow band measured by Photoluminescence Spectroscopy was observed when silicon doping concentration was increased up to 1.7 × 1019 atoms cm−3 . A particular mosaic structure was induced by the Si doping as inferred from Rutherford Backscattering measurements. The crystal quality shows a small degradation for very heavily doped samples(1.3 × 1020 atoms cm−3 ). | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Materials Research Express. Bristol. Vol. 9, no. 6 (June 2022), 065903, 8 p. | pt_BR |
dc.rights | Open Access | en |
dc.subject | GaN | en |
dc.subject | Dopagem | pt_BR |
dc.subject | Espectrometria de retroespalhamento rutherford | pt_BR |
dc.subject | Molecular beam epitaxy | en |
dc.subject | Microscopia eletrônica de transmissão | pt_BR |
dc.subject | Heteroepitaxy | en |
dc.subject | Silicon | en |
dc.subject | Nitreto de gálio | pt_BR |
dc.subject | Silício | pt_BR |
dc.subject | Si-doping | en |
dc.subject | Crystal defects | en |
dc.subject | RBS | en |
dc.title | Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 001144650 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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