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dc.contributor.authorCopetti, Gabrielapt_BR
dc.contributor.authorNunes, Eduardo Horbachpt_BR
dc.contributor.authorFeijó, Tais Orestespt_BR
dc.contributor.authorGalves, Lauren Aranhapt_BR
dc.contributor.authorHeilmann, Martinpt_BR
dc.contributor.authorSoares, Gabriel Vieirapt_BR
dc.contributor.authorLopes, J. M. J.pt_BR
dc.contributor.authorRadtke, Claudiopt_BR
dc.date.accessioned2021-04-09T04:24:48Zpt_BR
dc.date.issued2021pt_BR
dc.identifier.issn0957-4484pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/219698pt_BR
dc.description.abstractAs different low-dimensional materials are sought to be incorporated into microelectronic devices, graphene integration is dependent on the development of band gap opening strategies. Amidst the different methods currently investigated, application of strain and use of electronic quantum confinement have shown promising results. In the present work, epitaxial graphene nanoribbons (GNR), formed by surface graphitization of SiC (0001) on crystalline step edges, were submitted to photochemical chlorination. The incorporation of Cl into the buffer layer underlying graphene increased the compressive uniaxial strain in the ribbons. Such method is a promising tool for tuning the band gap of GNRs.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofNanotechnology. Bristol. Vol. 32, no. 14 (Apr. 2021), 145707, 6 p.pt_BR
dc.rightsOpen Accessen
dc.subjectGrafenopt_BR
dc.subjectGrapheneen
dc.subjectNanoribbonsen
dc.subjectCloração fotoquímicapt_BR
dc.subjectSiCen
dc.subjectNanofitaspt_BR
dc.subjectStrainen
dc.subjectChlorineen
dc.subjectXPSen
dc.subjectRamanen
dc.titleStrain-inducing photochemical chlorination of graphene nanoribbons on SiC (0001)pt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb001124020pt_BR
dc.type.originEstrangeiropt_BR


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