Nanoscale density fluctuations in swift heavy ion irradiated amorphous SiO2
dc.contributor.author | Kluth, Patrick | pt_BR |
dc.contributor.author | Pakarinen, O. H. | pt_BR |
dc.contributor.author | Djurabekova, F. | pt_BR |
dc.contributor.author | Giulian, Raquel | pt_BR |
dc.contributor.author | Ridgway, M.C. | pt_BR |
dc.contributor.author | Byrne, A. P. | pt_BR |
dc.contributor.author | Nordlund, K. | pt_BR |
dc.date.accessioned | 2020-03-11T04:16:52Z | pt_BR |
dc.date.issued | 2011 | pt_BR |
dc.identifier.issn | 0021-8979 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/206613 | pt_BR |
dc.description.abstract | We report on the observation of nanoscale density fluctuations in 2 μm thick amorphous SiO2 layers irradiated with 185 MeV Au ions. At high fluences, in excess of approximately 5 1012 ions=cm², where the surface is completely covered by ion tracks, synchrotron small angle x-ray scattering measurements reveal the existence of a steady state of density fluctuations. In agreement with molecular dynamics simulations, this steady state is consistent with an ion track “annihilation” process, where high-density regions generated in the periphery of new tracks fill in low-density regions located at the center of existing tracks. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Journal of applied physics. Vol. 110, no. 12 (Dec. 2011), 123520, 5 p. | pt_BR |
dc.rights | Open Access | en |
dc.subject | Física da matéria condensada | pt_BR |
dc.subject | Semicondutores amorfos | pt_BR |
dc.subject | Efeitos de feixe iônico | pt_BR |
dc.subject | Dinâmica molecular | pt_BR |
dc.subject | Sincrotrons | pt_BR |
dc.subject | Compostos de silício | pt_BR |
dc.subject | Ouro | pt_BR |
dc.title | Nanoscale density fluctuations in swift heavy ion irradiated amorphous SiO2 | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000829563 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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