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dc.contributor.authorKluth, Patrickpt_BR
dc.contributor.authorPakarinen, O. H.pt_BR
dc.contributor.authorDjurabekova, F.pt_BR
dc.contributor.authorGiulian, Raquelpt_BR
dc.contributor.authorRidgway, M.C.pt_BR
dc.contributor.authorByrne, A. P.pt_BR
dc.contributor.authorNordlund, K.pt_BR
dc.date.accessioned2020-03-11T04:16:52Zpt_BR
dc.date.issued2011pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/206613pt_BR
dc.description.abstractWe report on the observation of nanoscale density fluctuations in 2 μm thick amorphous SiO2 layers irradiated with 185 MeV Au ions. At high fluences, in excess of approximately 5 1012 ions=cm², where the surface is completely covered by ion tracks, synchrotron small angle x-ray scattering measurements reveal the existence of a steady state of density fluctuations. In agreement with molecular dynamics simulations, this steady state is consistent with an ion track “annihilation” process, where high-density regions generated in the periphery of new tracks fill in low-density regions located at the center of existing tracks.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofJournal of applied physics. Vol. 110, no. 12 (Dec. 2011), 123520, 5 p.pt_BR
dc.rightsOpen Accessen
dc.subjectFísica da matéria condensadapt_BR
dc.subjectSemicondutores amorfospt_BR
dc.subjectEfeitos de feixe iônicopt_BR
dc.subjectDinâmica molecularpt_BR
dc.subjectSincrotronspt_BR
dc.subjectCompostos de silíciopt_BR
dc.subjectOuropt_BR
dc.titleNanoscale density fluctuations in swift heavy ion irradiated amorphous SiO2pt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000829563pt_BR
dc.type.originEstrangeiropt_BR


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