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Structural change and heteroepitaxy induced by rapid thermal annealing of CaF/sub 2/ films on Si(111)

dc.contributor.authorMattoso Filho, Ney Pereirapt_BR
dc.contributor.authorMosca Junior, Dante Homeropt_BR
dc.contributor.authorSchreiner, Wido Herwigpt_BR
dc.contributor.authorMazzaro, Irineupt_BR
dc.contributor.authorTeixeira, Sergio Ribeiropt_BR
dc.contributor.authorMacedo, Waldemar A.A.pt_BR
dc.contributor.authorMartins, M.D.pt_BR
dc.date.accessioned2020-01-23T04:06:12Zpt_BR
dc.date.issued1998pt_BR
dc.identifier.issn0734-2101pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/204899pt_BR
dc.description.abstractIn this article we show that heteroepitaxial CaF2 films can be induced on Si~111! with a rapid thermal anneal. The change from preferentially oriented polycrystals to a single crystal with type- B epitaxy is visible by different structural techniques. The x-ray photoelectron spectroscopy results indicate the presence of a reacted layer at the CaF2 /Si interface with a pronounced increase of fluorine atoms at this interface. Transmission electron microscopy results show that big structural changes occur due to the thermal pulse.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofJournal of Vacuum Science & Technology a : Vacuum, Surfaces and Films. New York. Vol. 16, no. 4 (Jul./Aug. 1998), p. 2437-2441pt_BR
dc.rightsOpen Accessen
dc.subjectFilmes finospt_BR
dc.subjectCrescimento epitaxialpt_BR
dc.subjectMicroscopia eletrônica de transmissãopt_BR
dc.subjectDifração de raios Xpt_BR
dc.titleStructural change and heteroepitaxy induced by rapid thermal annealing of CaF/sub 2/ films on Si(111)pt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000136279pt_BR
dc.type.originEstrangeiropt_BR


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