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Study on direct current reactive sputtering deposition of aluminum nitride thin films
dc.contributor.author | Stedile, Fernanda Chiarello | pt_BR |
dc.contributor.author | Baumvol, Israel Jacob Rabin | pt_BR |
dc.contributor.author | Schreiner, Wido Herwig | pt_BR |
dc.contributor.author | Freire Junior, Fernando Leite | pt_BR |
dc.date.accessioned | 2020-01-23T04:05:46Z | pt_BR |
dc.date.issued | 1992 | pt_BR |
dc.identifier.issn | 0734-2101 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/204874 | pt_BR |
dc.description.abstract | Aluminum nitride thin films were deposited by dc magnetron reactive sputtering. The deposition parameters (cathode voltage, incident power, total pressure, and N2 partial pressure) were correlated and their influences on the compositional properties of the films were determined. The analytical tools used to characterize the aluminum nitride thin films were Rutherford backscattering spectrometry and the (d,p) and (p,y) nuclear reactions. From these techniques the thickness and stoichiometric ratio N/ Al of the films, the N and Al depth profiles, and the contamination levels of 0 and C were obtained. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Journal of Vacuum Science & Technology a : Vacuum, Surfaces and Films. New York. Vol. 10, no. 5 (Sept./Oct. 1992), p. 3272-3277 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Física da matéria condensada | pt_BR |
dc.subject | Implantação de íons | pt_BR |
dc.subject | Filmes finos | pt_BR |
dc.subject | Retroespalhamento rutherford | pt_BR |
dc.title | Study on direct current reactive sputtering deposition of aluminum nitride thin films | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000056049 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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