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dc.contributor.authorPezzi, Rafael Perettipt_BR
dc.contributor.authorMorais, Jonderpt_BR
dc.contributor.authorDahmen, Silvio Renatopt_BR
dc.contributor.authorBastos, Karen Pazpt_BR
dc.contributor.authorMiotti, Leonardopt_BR
dc.contributor.authorSoares, Gabriel Vieirapt_BR
dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.contributor.authorFreire Junior, Fernando Lazaropt_BR
dc.date.accessioned2020-01-23T04:05:35Zpt_BR
dc.date.issued2003pt_BR
dc.identifier.issn0734-2101pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/204865pt_BR
dc.description.abstractWe report here on the thermodynamical stability of ultrathin, hafnium-based dielectric films, namely hafnium oxide (HfO2), silicate (HfSixOy), and aluminum silicate (AlHfxSiyOz), deposited on silicon. These materials are promising candidates to replace the well established silicon oxide and oxynitride as gate dielectric materials in advanced Si-based complementary metal–oxide– semiconductor technology. Since there are mandatory requirements on the gate dielectric material, hafnium oxide is currently being modified, by adding silicon and aluminum into the matrix, increasing its thermal stability, and improving its electrical properties. Diffusion-reaction during thermal processing was investigated using isotopic substitution together with ion beam techniques such as Rutherford backscattering spectrometry, narrow nuclear resonance profiling, and nuclear reaction analysis. The chemical changes in the films were accessed by x-ray photoelectron spectroscopy.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofJournal of vacuum science & technology. A, Vacuum, surfaces and films. Melville. Vol. 21, no. 4 (July/Aug. 2003), p. 1424-1430pt_BR
dc.rightsOpen Accessen
dc.subjectCompostos de alumíniopt_BR
dc.subjectMateriais dielétricospt_BR
dc.subjectFilmes finos dieletricospt_BR
dc.subjectCompostos de háfniopt_BR
dc.subjectRetroespalhamento rutherfordpt_BR
dc.subjectAuto-difusaopt_BR
dc.subjectSilíciopt_BR
dc.subjectEstabilidade térmicapt_BR
dc.subjectEspectros de raio x de fotoeletronspt_BR
dc.titleThermal behavior of hafnium-based ultrathin films on siliconpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000379220pt_BR
dc.type.originEstrangeiropt_BR


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