Listar Ingeniería por autor "Fichtner, Paulo Fernando Papaleo"
Mostrando ítems 1-20 de 20
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Amorphization/recrystallization of buried amorphous silicon layer induced by oxygen ion implantation
(2004) [Artículo de periódico]In this paper we discuss the structural modifications observed in a buried amorphous Si (α-Si) layer containing high oxygen concentration level (up to ~ 3 at.%) after being implanted at elevated temperature with 16O+ ions. ... -
Bi nanowires modified by 400 keV and 1 MeV Au ions
(2018) [Artículo de periódico]We report on the modification of the structure and morphology of Bi nanowires of two different diameters (80 or 130 nm) exposed to beams of 400 keV and 1 MeV Au+ until complete wire degradation. For fluences up to ∼1 ion/nm2 ... -
Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon
(2000) [Artículo de periódico]He1 ions were implanted at 40 keV into Si <100> channel direction at room temperature (RT) and at 350 °C. The Si samples were subsequently doped with Cu in order to study the gettering of Cu atoms at the defective layer. ... -
Effects of carbon on dynamic annealing and on electrical activation of dopants in silicon substrate
(1994) [Artículo de periódico]The effect of C on the implantation damage accumulation in Si crystal and on the electrical T activation of dopants was investigated, using RBS-channeling technique, sheet resistivity and Hall measurements. The damage ... -
Electrical Activation of Bismuth Implanted Into Silicon by Rapid Thermal Annealing and Kinetics of Defects
(1993) [Artículo de periódico]The rapid thermal annealing (RTA) of Si implanted with Bi+, to a dose of 5.0~x1014 cm-² at the energy of 150 keV, was investigated using sheet resistivity, Hall measurements, and channeling analysis. Approximately 95% of ... -
Enhanced damage accumulation in carbon implanted silicon
(1994) [Artículo de periódico]The accumulation of damage in Si implanted with 12C+ was investigated experimentally using aligned Rutherford backscattering analysis. The damage protiles in Si implanted with 12C+ or 11B+ at 50 keV to the same doses and ... -
Gettering of copper in silicon at half of the projected ion range induced by helium implantation
(2002) [Artículo de periódico]Secondary ion mass spectroscopy, transmission electron microscopy, Rutherford backscattering /channeling spectrometry, and elastic recoil detection analysis measurements were used to determine the Cu gettering behavior ... -
H-induced subcritical crack propagation and interaction phenomena in (001) Si using He-cracks templates
(2010) [Artículo de periódico]H and He ion implantations allow the formation of nanocracks within controlled subsurface depths in semiconducting materials. Upon annealing, crack propagation and coalescence provides a way of cutting monocrystalline thin ... -
Implanted boron depth profiles in the az111 photoresist
(1988) [Artículo de periódico]The isotope 1OB has been implanted into the photoresist AZll1 in the 30–150 keV energy range. The corresponding depth profiles have been analyzed using the 1OB(n,a) 7 Li reaction. At 60 keV, the profile changes from a ... -
Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering
(2013) [Artículo de periódico]The crystalline-to-amorphous transformation induced by lithium ion implantation at low temperature has been investigated. The resulting damage structure and its thermal evolution have been studied by a combination of ... -
Nanoporous SiO 2 / Si thin layers produced by ion track etching : dependence on the ion energy and criterion for etchability
(2008) [Artículo de periódico]Vitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au ions with energies from 0.005 to 11.1 MeV/u and by ions at constant velocity 0.1 MeV/u 197Au, 130Te, 75As, 32S, and 19F . Subsequent chemical ... -
On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies
(2010) [Artículo de periódico]We report on the microstructure of silicon coimplanted with hydrogen and helium ions at moderate energies. X-ray diffraction investigations in as-implanted samples show the direct correlation between the lattice strain and ... -
Orientation of H platelets under local stress in Si
(2008) [Artículo de periódico]Hydrogen is implanted into 001 silicon under the strain field of previously formed overpressurized helium plates. Upon thermal annealing, the hydrogen atoms precipitate into platelet structures oriented within specific 111 ... -
Recrystallization behavior of silicon implanted with iron
(1992) [Artículo de periódico]The solid phase epitaxial growth (SPEG) of amorphized Si layers implanted with Fe (1 X 1015 cm-², 100 keV) was investigated in the temperature range from 500 to 550 °C using Rutherford backscattering spectrometry. The ... -
Role of dipolar interactions in a system of Ni nanoparticles studied by magnetic susceptibility measurements
(2009) [Artículo de periódico]The role of dipolar interactions among Ni nanoparticles NPs embedded in an amorphous SiO2 /C matrix with different concentrations has been studied performing ac magnetic susceptibility ac measurements. For very diluted ... -
Role of thermodynamics in the shape transformation of embedded metal nanoparticles induced by swift heavy-ion irradiation
(2011) [Artículo de periódico] -
Shape transformation of Sn nanocrystals induced by swift heavy-ion irradiation and the necessity of a molten ion track
(2010) [Artículo de periódico]We report on the spherical to rodlike shape transformation of Sn nanocrystals NCs embedded in amorphous SiO2 following irradiation with 185 MeV Au ions. Consistent with previous reports for other metals, transmission ... -
Strain development and damage accumulation during neon ion implantation into silicon at elevated temperatures
(2000) [Artículo de periódico]The development of mechanical strain and accumulation of damage in silicon single crystals implanted with Ne ions to doses in the range of 0.1–1.0 x1017 cm-² at temperatures from 200 to 600 °C were investigated employing ... -
Structural and optical properties of InP quantum dots grown on GaAs(001)
(2007) [Artículo de periódico]We investigated structural and optical properties of type-II InP/GaAs quantum dots using reflection high energy electron diffraction, transmission electron microscopy, atomic force microscopy, grazing incidence x-ray ... -
Thermal behavior and range distribution of 209bi implanted the into ai/v bilayer structure
(1988) [Artículo de periódico]350-keV 209Bi + was implanted into an A1 (1000 Å)/V bilayer system. The Bi depth distribution measured by Rutherford backscattering agrees well with predictions obtained via the Monte-Carlo simulation method (TRIM code). ...
