Listar Ingeniería por autor "Amaral, Livio"

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    • Implanted boron depth profiles in the az111 photoresist 

      Guimaraes, Renato Bastos; Amaral, Livio; Behar, Moni; Fichtner, Paulo Fernando Papaleo; Zawislak, Fernando Claudio (1988) [Artículo de periódico]
      The isotope 1OB has been implanted into the photoresist AZll1 in the 30–150 keV energy range. The corresponding depth profiles have been analyzed using the 1OB(n,a) 7 Li reaction. At 60 keV, the profile changes from a ...

    • Recrystallization behavior of silicon implanted with iron 

      Souza, Joel Pereira de; Amaral, Livio; Fichtner, Paulo Fernando Papaleo (1992) [Artículo de periódico]
      The solid phase epitaxial growth (SPEG) of amorphized Si layers implanted with Fe (1 X 1015 cm-², 100 keV) was investigated in the temperature range from 500 to 550 °C using Rutherford backscattering spectrometry. The ...