Listar Ingeniería por tema "TCAD"
Mostrando ítems 1-1 de 1
-
Evaluation of single event upset susceptibility of FinFET-based SRAMs with weak resistive defects
(2021) [Artículo de periódico]Fin Field-Efect Transistor (FinFET) technology enables the continuous downscaling of Integrated Circuits (ICs), using the Complementary Metal-Oxide Semiconductor (CMOS) technology in accordance with the More Moore domain. ...