• Hydrogen trapping in oxigen-deficient hafnium silicates 

      Fonseca, Leonardo R. C.; Xavier Jr., A. L.; Ribeiro Jr., Marcelo; Driemeier, Carlos Eduardo; Baumvol, Israel Jacob Rabin (2007) [Artigo de periódico]
      Isotopic substitution, nuclear reaction analysis, and x-ray photoelectron spectroscopy were employed to show that oxygen-deficient hafnium (Hf) silicates trap hydrogen atoms. Based on this experimental observation, we used ...
    • MOSFET ZTC condition analysis for a self-biased current reference design 

      Toledo, Pedro Filipe Leite Correia de; Klimach, Hamilton Duarte; Cordova Vivas, David Javier; Bampi, Sergio; Fabris, Eric Ericson (2015) [Artigo de periódico]
      In this paper a self-biased current reference based on Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Zero Temperature Coefficient (ZTC) condition is proposed. It can be imple mented in any Complementary ...
    • Statistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETs 

      Wirth, Gilson Inacio; Silva, Roberto da; Brederlow, Ralf (2007) [Artigo de periódico]
      This paper covers measurement, analytical analysis, and Monte Carlo simulation of the frequency and bandwidth dependence of MOSFET low-frequency (LF) noise behavior. The model is based on microscopic device physics parameters, ...