Listar Ciencias Exactas y Naturales por tema "Impurezas"
Mostrando ítems 1-13 de 13
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Algebraic properties of an integrable t-J model with impurities
(1999) [Artículo de periódico]We investigate the algebraic structure of a recently proposed integrable t-J model with impurities. Three forms of the Bethe ansatz equations are presented corresponding to the three choices for the grading. We prove that ... -
Conductivity of a metal with inverse-power-law correlated impurities
(1995) [Artículo de periódico]We calculate the cooperon for a system of noninteracting electrons in the presence of random potentials with correlations W(r)= W08(r)+ W,r-<d+u> in d dimensions, for arbitrary values a and d, to first order in W1. Our ... -
Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon
(2000) [Artículo de periódico]He1 ions were implanted at 40 keV into Si <100> channel direction at room temperature (RT) and at 350 °C. The Si samples were subsequently doped with Cu in order to study the gettering of Cu atoms at the defective layer. ... -
Electrical resistivity of bismuth implanted into silicon
(1996) [Artículo de periódico]We investigate the electrical properties of Bi-doped Si samples, prepared by ion implantation, in a range of concentrations around and above the metal–nonmetal transition. Comparison between experimental and theoretical ... -
Electric field gradients and impurity distributions in doped noble metals : a systematic study
(1980) [Artículo de periódico]The electric field gradients created at 111Cd nuclei by dilute transition-element impurities in noble metais are studied by the technique of time-differential perturbed angular correlation. The present results supplement ... -
Electronic structure of substitutional 3d impurities in gamma/sup'/-fe/sub 4/n
(1997) [Artículo de periódico]The magnetic and electronic structure of 3d localized impurities (Sc, Ti, V, Cr, Mn, Co, Ni, Cu and Zn) in the ferromagnetic iron nitride γ - F e4N are investigated in molecular cluster calculations with the discrete ... -
Enhanced electrical activation of indium coimplanted with carbon in a silicon substrate
(1999) [Artículo de periódico]Electrical activation of In of 18%–52% of the implanted dose (531014 cm-²) was obtained in Si samples having a C+ coimplantation after rapid thermal annealing (RTA) at 800–1000 °C for 15 s. This electrical activation yield ... -
Gettering of copper in silicon at half of the projected ion range induced by helium implantation
(2002) [Artículo de periódico]Secondary ion mass spectroscopy, transmission electron microscopy, Rutherford backscattering /channeling spectrometry, and elastic recoil detection analysis measurements were used to determine the Cu gettering behavior ... -
Impurity resistivity of the double-donor system Si:P,Bi
(1999) [Artículo de periódico]The electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities ... -
Magnetoresistance of pd-fe and pd-ni-fe alloys
(1983) [Artículo de periódico]The electrical resistivity ofPd-Fe alloys has been measured in magnetic fields parallel and perpendicular to the current, for a wide range of alloy compositions. The influence of atomic ordering on the magnetoresistance ... -
Rare-earth spin-glasses with uniaxial anisotropy
(1984) [Artículo de periódico]The properties of spin-glasses with uniaxial anisotropy are investigated by magnetization measurements on single crysta1s of Y and Se doped with Er, Dy, Tb, or Gd impurities. In alloys with strong anisotropy, spin-glass ... -
Temperature dependence of the electric field gradient generated by nearest-neighbor impurity atoms in cubic Ag metal
(1978) [Artículo de periódico]The electric quadrupole interactions produced by near-neighbor (nn) and distant-neighbor impurity atoms of Cu, Au, Zn, In, Ga, Al, Sn, and Sb in a cubic Ag lattice are measured as a function of the temperature by the time ... -
Temperature dependence of the electric field gradient in cubic ag metal doped with impurities
(1977) [Artículo de periódico]
