• Overpressurized bubbles versus voids formed in helium implanted annealed silicon 

      Fichtner, Paulo Fernando Papaleo; Kaschny, Jorge Ricardo de Araujo; Yankov, Rossen A.; Mucklich, A.; Kreissig, Ulrich; Skorupa, Wolfgang (1997) [Artigo de periódico]
      The formation of helium induced cavities in silicon is studied as a function of implant energy (10 and 40 keV) and dose (131015, 131016, and 531016 cm22). Specimens are analyzed after annealing (800 °C, 10 min) by transmission ...