Navegação Ciências Exatas e da Terra por Autor "Wallace, Robert M."

Resultados 1-3 de 3

    • Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon 

      Pezzi, Rafael Peretti; Miotti, Leonardo; Bastos, Karen Paz; Soares, Gabriel Vieira; Driemeier, Carlos Eduardo; Baumvol, Israel Jacob Rabin; Punchaipetch, P.; Pant, Gaurang; Gnade, Bruce E.; Wallace, Robert M.; Rotondaro, Antonio L.P.; Visokay, J.M.; Chambers, Jim J.; Colombo, Luigi (2004) [Artigo de periódico]
      Hydrogen and deuterium incorporation into nitrided and non-nitrided hafnium silicate films on Si during thermal annealing in 1H- and 2H-containing atmospheres was investigated. 1H profiling was accessed by means of nuclear ...

    • Interaction of HfO/sub 2//SiO/sub 2/Si structures with deuterium gas 

      Driemeier, Carlos Eduardo; Miotti, Leonardo; Radtke, Claudio; Gusev, Evgeni P.; Kim, M.J.; Wallace, Robert M. (2006) [Artigo de periódico]
      HfO2 films 2.5 to 12 nm deposited on thermal SiO2 1.5 nm on Si were annealed in deuterium gas at 400–600 °C and incorporated D amounts were quantified using the D 3He, p 4He nuclear reaction.We found 1013 D cm−2 in the ...

    • Oxygen species in HfO/sub 2/ films : an in situ x-ray photoelectron spectroscopy study 

      Driemeier, Carlos Eduardo; Wallace, Robert M.; Baumvol, Israel Jacob Rabin (2007) [Artigo de periódico]
      The chemical bonding of O atoms in HfO2 films on Si was investigated by in situ x-ray photoelectron spectroscopy in the O 1s spectral region. In addition to trivial O forming only O-Hf bonds, O 1s signals corresponding to ...