Navegação Ciências Exatas e da Terra por Autor "Reboh, Shay"

Resultados 1-4 de 4

    • Aging effects on the nucleation of Pb nanoparticles in silica 

      Luce, Flavia Piegas; Kremer, Felipe; Reboh, Shay; Fabrim, Zacarias Eduardo; Sanchez, Dario Ferreira; Zawislak, Fernando Claudio; Fichtner, Paulo Fernando Papaleo (2011) [Artigo de periódico]
      The ion beam synthesis of Pb nanoparticles (NPs) in silica is studied in terms of a two step thermal annealing process consisting of a low temperature long time aging treatment followed by a high temperature short time ...

    • Electroluminescence induced by Ge nanocrystals obtained by hot ion implantation into SiO2 

      Bregolin, Felipe Lipp; Behar, Moni; Sias, Uilson Schwantz; Reboh, Shay; Lehmann, Jan; Rebohle, Lars; Skorupa, Wolfgang (2009) [Artigo de periódico]
      Commonly, electroluminescence (EL) from Ge nanocrystals (Ge NCs) has been obtained by room temperature (RT) Ge implantation into a SiO2 matrix followed by a high temperature anneal. In the present work, we have used a novel ...

    • Lattice strain distribution resolved by X-ray Braggsurface diffraction in an Si matrix distorted by embedded FeSi2 nanoparticles 

      Lang, Rossano; Menezes, Alan Silva de; Santos, Adenilson Oliveira dos; Reboh, Shay; Meneses, Eliermes Arraes; Amaral, Livio; Cardoso, Lisandro Pavie (2013) [Artigo de periódico]
      Out-of-plane and primarily in-plane lattice strain distributions, along the two perpendicular crystallographic directions on the subsurface of a silicon layer with embedded FeSi2 nanoparticles, were analyzed and resolved ...

    • Unraveling structural and compositional information in 3D FinFET electronic devices 

      Trombini, Henrique; Marmitt, Gabriel Guterres; Vellame, Igor Alencar; Baptista, Daniel Lorscheitter; Reboh, Shay; Mazen, Frédéric; Pinheiro, Rafael Bortolin; Sanchez, Dario Ferreira; Senna, Carlos Alberto; Archanjo, Braulio Soares; Achete, Carlos A.; Grande, Pedro Luis (2019) [Artigo de periódico]
      Non-planar Fin Field Effect Transistors (FinFET) are already present in modern devices. The evolution from the well-established 2D planar technology to the design of 3D nanostructures rose new fabrication processes, but a ...