• Effect of irradiation temperature and ion flux on electrical isolation of GaN 

      Kucheyev, Sergei O.; Boudinov, Henri Ivanov; Williams, J.S.; Jagadish, Chenupati; Li, Gang (2002) [Artigo de periódico]
      We study the evolution of sheet resistance of n-type GaN epilayers irradiated with MeV 1H and 12C ions. Results show that both implantation temperature (varied from 77 up to 423 K) and ion beam flux affect the process of ...
    • Electrical isolation of GaN by MeV ion irradiation 

      Boudinov, Henri Ivanov; Kucheyev, Sergei O.; Williams, J.S.; Jagadish, Chenupati; Li, Gang (2001) [Artigo de periódico]
      The evolution of sheet resistance of n-type GaN epilayers exposed to irradiation with MeV H, Li, C, and O ions is studied in situ. Results show that the threshold dose necessary for complete isolation linearly depends on ...