Browsing Exact and Earth Sciences by Author "Freire Junior, Fernando Lazaro"

Now showing items 1-4 of 4

    • Effects of thermal annealing on the structural, mechanical, and tribological properties of hard fluorinated carbon films deposited by plasma enhanced chemical vapor deposition 

      Costa, Marcelo Eduardo Huguenin Maia da; Baumvol, Israel Jacob Rabin; Radtke, Claudio; Jacobsohn, Luiz Gustavo; Zamora, R. R. M.; Freire Junior, Fernando Lazaro (2004) [Journal article]
      Hard amorphous fluorinated carbon films (a-C:F) deposited by plasma enhanced chemical vapor deposition were annealed in vacuum for 30 min in the temperature range of 200–600 °C. The structural and compositional modifications ...

    • On the behavior of deuterium in ultrathin SiO2 films upon thermal annealing 

      Baumvol, Israel Jacob Rabin; Gusev, Evgeni P.; Stedile, Fernanda Chiarello; Freire Junior, Fernando Lazaro; Green, Martin L.; Brasen, D. (1998) [Journal article]
      Following the observation of the large isotopic effect in D2 passivated gate dielectrics @J. Lyding, K. Hess, and I. C. Kizilyalli, Appl. Phys. Lett. 68, 2526 ~1996!#, we studied the behavior of deuterium in ultrathin SiO2 ...

    • Oxygen transport and GeO2 stability during thermal oxidation of Ge 

      Silva, Samoel Renan Mello da; Rolim, Guilherme Koszeniewski; Soares, Gabriel Vieira; Baumvol, Israel Jacob Rabin; Krug, Cristiano; Miotti, Leonardo; Freire Junior, Fernando Lazaro; Costa, Marcelo Eduardo Huguenin Maia da; Radtke, Claudio (2012) [Journal article]
      Oxygen transport during thermal oxidation of Ge and desorption of the formed Ge oxide are investigated. Higher oxidation temperatures and lower oxygen pressures promote GeO desorption. An appreciable fraction of oxidized ...

    • Thermal behavior of hafnium-based ultrathin films on silicon 

      Pezzi, Rafael Peretti; Morais, Jonder; Dahmen, Silvio Renato; Bastos, Karen Paz; Miotti, Leonardo; Soares, Gabriel Vieira; Baumvol, Israel Jacob Rabin; Freire Junior, Fernando Lazaro (2003) [Journal article]
      We report here on the thermodynamical stability of ultrathin, hafnium-based dielectric films, namely hafnium oxide (HfO2), silicate (HfSixOy), and aluminum silicate (AlHfxSiyOz), deposited on silicon. These materials are ...