Navegação Ciências Exatas e da Terra por Autor "Dimitrijev, Sima"

Resultados 1-3 de 3

    • Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC 

      Corrêa, Silma Alberton; Radtke, Claudio; Soares, Gabriel Vieira; Miotti, Leonardo; Baumvol, Israel Jacob Rabin; Dimitrijev, Sima; Han, J.; Hold, L.; Kong, F.; Stedile, Fernanda Chiarello (2009) [Artigo de periódico]
      C-containing interlayers formed between the SiC substrate and dielectric films thermally grown in O2, NO, and in O2 followed by annealing in NO were investigated. X-ray reflectometry and x-ray photoelectron spectroscopy ...

    • Hydrogen incorporation dependence on the thermal growth route in dielectric/SiC structures 

      Corrêa, Silma Alberton; Soares, Gabriel Vieira; Tanner, Philip; Han, Jisheng; Dimitrijev, Sima; Stedile, Fernanda Chiarello (2013) [Artigo de periódico]
      The incorporation of hydrogen in dielectric/SiC structures and Pt/dielectric/SiC structures whose dielectric films were thermally grown in O 2 , NO, or O 2 followed by annealing in NO was investigated. The amount and the ...

    • Sequential thermal treatments of SiC in NO and O2 : atomic transport and electrical characteristics 

      Soares, Gabriel Vieira; Baumvol, Israel Jacob Rabin; Hold, L.; Kong, F.; Han, J.; Dimitrijev, Sima; Radtke, Claudio; Stedile, Fernanda Chiarello (2007) [Artigo de periódico]
      Sequential thermal oxidations and oxynitridations of SiC were performed using 18O2 and NO. The resulting films were characterized by x-ray photoelectron spectroscopy, ion beam analyses, and capacitance-voltage measurements. ...