Navegação Ciências Exatas e da Terra por Autor "Copel, Matthew"

Resultados 1-6 de 6

    • Aluminum mobility and interfacial segregation in fully silicided gate contacts 

      Pezzi, Rafael Peretti; Copel, Matthew; Cabral Junior, C.; Baumvol, Israel Jacob Rabin (2005) [Artigo de periódico]
      The mobility of aluminum implanted as a dopant of fully silicided nickel for advanced metal gates has been investigated following rapid thermal annealing at temperatures ranging from 160 to 700 °C. Resonant nuclear reaction ...

    • Atomic transport and integrity of Al/sub 2/O/sub 3(2.0 nm)/HfO/sub 2/(2.5 nm) gate stacks on Si 

      Miotti, Leonardo; Pezzi, Rafael Peretti; Copel, Matthew; Krug, Cristiano; Baumvol, Israel Jacob Rabin (2007) [Artigo de periódico]
      The integrity of Al2O3 2.0 nm /HfO2 2.5 nm /SiO2 1 nm /Si 001 stacks after rapid thermal annealing at temperature up to 1025 °C was investigated. The structures were prepared by atomic layer deposition and atomic transport ...

    • Effect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires 

      Jagannathan, Hemanth; Nishi, Yoshio; Reuter, Mark; Copel, Matthew; Tutuc, Emanuel; Guha, Supratik; Pezzi, Rafael Peretti (2006) [Artigo de periódico]
      A direct dependence between the inadvertent formation of SiO2 on gold films deposited on silicon 111 substrates, and the nucleation and yield of epitaxial, gold catalyzed, silicon nanowires grown on such substrates is ...

    • High-resolution depth profiling in ultrathin Al/sub 2/O/sub 3/ films on Si 

      Gusev, Evgeni P.; Copel, Matthew; Cartier, Eduard; Baumvol, Israel Jacob Rabin; Krug, Cristiano; Gribelyuk, M.A. (2000) [Artigo de periódico]
      A combination of two complementary depth profiling techniques with sub-nm depth resolution, nuclear resonance profiling and medium energy ion scattering, and cross-sectional high-resolution transmission electron microscopy ...

    • Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si 

      Pezzi, Rafael Peretti; Copel, Matthew; Gordon, Michael; Cartier, Eduard; Baumvol, Israel Jacob Rabin (2006) [Artigo de periódico]
      Oxygen transport and incorporation were investigated following postdeposition annealing of metal-oxide-semiconductor structures having ultrathin rhenium films as metal electrode and HfO2 films as dielectric on Si 001 . ...

    • Reduction of hafnium oxide and hafnium silicate by rhenium and platinum 

      Copel, Matthew; Pezzi, Rafael Peretti; Neumayer, Deborah; Jamison, Paul (2006) [Artigo de periódico]
      We report chemical interactions of Hf-based dielectrics with Re and Pt overlayers during annealing. Reduction of the Hf to a suboxide is observed by x-ray photoelectron spectroscopy, along with a decrease in total oxygen ...