• Environment of hafnium and silicon in Hf-based dielectric films : an atomistic study by x-ray absorption spectroscopy and x-ray diffraction 

      Morais, Jonder; Miotti, Leonardo; Bastos, Karen Paz; Teixeira, Sergio Ribeiro; Baumvol, Israel Jacob Rabin; Rotondaro, Antonio L.P.; Chambers, James Joseph; Visokay, Mark R.; Colombo, Luigi; Alves, Maria do Carmo Martins (2005) [Artigo de periódico]
      The atomic structure of HfSiO and HfSiON was investigated before and after thermal annealing using x-ray diffraction and x-ray absorption spectroscopy. In HfSiO, the Hf atoms are arranged in a monoclinic HfO2 structure ...
    • Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling 

      Miotti, Leonardo; Bastos, Karen Paz; Soares, Gabriel Vieira; Driemeier, Carlos Eduardo; Pezzi, Rafael Peretti; Morais, Jonder; Baumvol, Israel Jacob Rabin; Rotondaro, Antonio L.P.; Visokay, Mark R.; Chambers, James Joseph; Quevedo-Lopez, M.; Colombo, Luigi (2004) [Artigo de periódico]
      HfSiON films deposited on Si (001) by reactive sputtering were submitted to rapid thermal annealing at 1000 °C in vacuum, N2 and O2 atmospheres. The stability of the dielectric was evaluated by measuring the atomic transport ...
    • Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon 

      Pezzi, Rafael Peretti; Miotti, Leonardo; Bastos, Karen Paz; Soares, Gabriel Vieira; Driemeier, Carlos Eduardo; Baumvol, Israel Jacob Rabin; Punchaipetch, P.; Pant, Gaurang; Gnade, Bruce E.; Wallace, Robert M.; Rotondaro, Antonio L.P.; Visokay, J.M.; Chambers, Jim J.; Colombo, Luigi (2004) [Artigo de periódico]
      Hydrogen and deuterium incorporation into nitrided and non-nitrided hafnium silicate films on Si during thermal annealing in 1H- and 2H-containing atmospheres was investigated. 1H profiling was accessed by means of nuclear ...
    • Integrity of hafnium silicate/silicon dioxide ultrathin films on Si 

      Morais, Jonder; Miotti, Leonardo; Soares, Gabriel Vieira; Teixeira, Sergio Ribeiro; Pezzi, Rafael Peretti; Bastos, Karen Paz; Baumvol, Israel Jacob Rabin; Rotondaro, Antonio L.P.; Chambers, Jim J.; Visokay, Mark R.; Colombo, Luigi (2002) [Artigo de periódico]
      Rapid thermal annealing at 1000 °C of (HfO2)12x(SiO2)x pseudobinary alloy films deposited on Si were performed in N2 or O2 atmospheres. The effects on the atomic transport, structure, and composition were investigated using ...
    • Stability of zirconium silicate films on Si under vacuum and O/sub 2/ annealing 

      Morais, Jonder; Rosa, Elisa Brod Oliveira da; Miotti, Leonardo; Pezzi, Rafael Peretti; Baumvol, Israel Jacob Rabin; Rotondaro, Antonio L.P.; Bevan, M.J.; Colombo, Luigi (2001) [Artigo de periódico]
      The effect of postdeposition annealing in vacuum and in dry O2 on the atomic transport and chemical stability of chemical vapor deposited ZrSixOy films on Si is investigated. Rutherford backscattering spectrometry, narrow ...
    • Thermochemical behavior of hydrogen in hafnium silicate films on Si 

      Driemeier, Carlos Eduardo; Chambers, James Joseph; Colombo, Luigi; Baumvol, Israel Jacob Rabin (2006) [Artigo de periódico]
      HfSiO films on Si were sequentially annealed in vacuum, oxygen, hydrogen, or deuterium atmospheres followed by quantification of H and D by nuclear reaction analysis. The observed H D incorporation and desorption behaviors ...