Navegação Ciências Exatas e da Terra por Autor "Washburn, J."

Resultados 1-6 de 6

    • Ion beam synthesis of cubic FeSi2 

      Desimoni, Judith; Bernas, H.; Behar, Moni; Lin, X.W.; Washburn, J.; Liliental-Weber, Zuzanna (1993) [Artigo de periódico]
      Cubic FeSi, precipitates were synthesized in Si ( 100) by room-temperature Fe ion implantation followed by Si 500 keV ion beam induced epitaxial crystallization at 320 “C!. High resolution electron microscopy and Rutherford ...

    • Low-temperature ion-induced epitaxial growth of alfa-FeSi2 and cubic FeSi2 in Si 

      Lin, X.W.; Behar, Moni; Desimoni, Judith; Bernas, H.; Washburn, J.; Liliental-Weber, Zuzanna (1993) [Artigo de periódico]
      Ion-beam-induced epitaxial crystallization of amorphous Si implanted with Fe to 18 at. % peak concentration was studied. The structure of the specimen was characterized using transmission electron microscopy and Rutherford ...

    • Sequential phase formation by ion-induced epitaxy in fe-implanted si(001) 

      Lin, X.W.; Maltez, Rogério Luis; Behar, Moni; Liliental-Weber, Zuzanna; Washburn, J. (1995) [Artigo de periódico]
      Ion-beam-induced epitaxial crystallization (IBIEC) of Fe-implanted Si(OO1) was studied by transmission electron microscopy and Rutherford backscattering spectrometry. For sufficiently high Fe doses, it was found that IBIEC ...

    • Structural and photoluminescence studies of Er implated Be doped and undoped low-temperature grown GaAs 

      Maltez, Rogério Luis; Liliental-Weber, Zuzanna; Washburn, J.; Behar, Moni; Klein, P.B.; Specht, P.; Weber, E.R. (1999) [Artigo de periódico]
      Characteristic 1.54 μm Er3+ emission has been observed from Er-implanted and annealed, low-temperature grown GaAs Be doped and undoped samples. Er plateau implantations (480, 155, and 40 keV successive implants) were ...

    • Synthesis of GaN by N ion implantation in GaAs (001) 

      Lin, X.W.; Behar, Moni; Maltez, Rogério Luis; Swider, W.; Liliental-Weber, Zuzanna; Washburn, J. (1995) [Artigo de periódico]
      Both the hexagonal and cubic GaN phases were synthesized in GaAs ~001! by 50 keV N ion implantation at 380 °C and subsequent furnace annealing at 850–950 °C for 10 min–2 h. For a fluence of 1.531017 cm22, transmission ...

    • Transmission electron microscopy and photoluminescence studies of Er implated low-temperature grown GaAs:Be 

      Maltez, Rogério Luis; Liliental-Weber, Zuzanna; Washburn, J.; Behar, Moni; Klein, P.B.; Specht, P.; Weber, E.R. (1998) [Artigo de periódico]
      Characteristic 1.54 mm 4f-4 f emission has been observed from Er31 centers in Er-implanted and annealed, low-temperature grown GaAs:Be samples, while cross-sectional transmission electron microscopy ~TEM! studies reveal ...