• Thermal activation of As implanted in bulk Si and separation by implanted oxygen 

      Dalponte, Mateus; Boudinov, Henri Ivanov; Goncharova, L.V.; Starodub, D.; Garfunkel, E.; Gustafsson, T. (2004) [Artigo de periódico]
      We have studied arsenic (As) diffusion and its electrical activation in two different types of silicon substrates: bulk Si and separation by implanted oxygen (SIMOX) wafers. Both substrates were implanted with a dose of ...