Listar Ciencias Exactas y Naturales por autor "Tan, Hoe H."

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    • Characterization of deep level traps responsible for isolation of proton implanted GaAs 

      Boudinov, Henri Ivanov; Coelho, Artur Vicente Pfeifer; Tan, Hoe H.; Jagadish, Chenupati (2003) [Artículo de periódico]
      Deep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability ...

    • Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation 

      Van Lippen, Twan; Boudinov, Henri Ivanov; Tan, Hoe H.; Jagadish, Chenupati (2002) [Artículo de periódico]
      The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa12xAs layers (x=0.3, 0.6, and 1.0) during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly ...

    • Electrical isolation of n-type and p-type InP layers by proton bombardment 

      Boudinov, Henri Ivanov; Tan, Hoe H.; Jagadish, Chenupati (2001) [Artículo de periódico]
      The evolution of the sheet resistance (Rs) of n-type and p-type conductive InP layers during proton irradiation and the stability of the formed isolation during postirradiation annealing were investigated. It was found ...

    • Ultrafast trapping times in ion implanted InP 

      Carmody, Christine; Boudinov, Henri Ivanov; Tan, Hoe H.; Jagadish, Chenupati; Lederer, Max J.; Koley, Vesselin; Luther-Davies, B.; Dao, L.V.; Gal, Michael (2002) [Artículo de periódico]
      As+ and P+ implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of ...