Listar Ciencias Exactas y Naturales por autor "Radtke, Claudio"
Mostrando ítems 1-20 de 29
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Atomic transport across the interfaces during the formation of ultrathin silicon oxide/nitride/oxide films
(1998) [Artículo de periódico]The redistribution of O and N during the final, thermal oxidation in dry O2 step in the formation of ultrathin silicon oxide/nitride/oxide dielectric films ~ONO! was investigated using isotopic tracing and depth profiling ... -
Clean synthesis of biocarbon-supported Ni@Pd core–shell particles via hydrothermal method for direct ethanol fuel cell anode application
(2020) [Artículo de periódico]Direct ethanol fuel cells (DEFCs) are devices for clean and sustainable energy production, where the generation of electrical energy occurs as a result of the anodic ethanol oxidation reaction (EOR). One of the main ... -
Comparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structures
(2000) [Artículo de periódico]The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 ... -
Effects of ion irradiation in the thermal oxidation of SIC
(2002) [Artículo de periódico]We investigated the thermal growth of SiO₂ films on 6H-SiC (0001) samples irradiated with 170 keV Ar⁺ ions. Electronic, compositional, and structural features arisen from the irradiation process were accessed. All results ... -
Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC
(2009) [Artículo de periódico]C-containing interlayers formed between the SiC substrate and dielectric films thermally grown in O2, NO, and in O2 followed by annealing in NO were investigated. X-ray reflectometry and x-ray photoelectron spectroscopy ... -
Effects of thermal annealing on the structural, mechanical, and tribological properties of hard fluorinated carbon films deposited by plasma enhanced chemical vapor deposition
(2004) [Artículo de periódico]Hard amorphous fluorinated carbon films (a-C:F) deposited by plasma enhanced chemical vapor deposition were annealed in vacuum for 30 min in the temperature range of 200–600 °C. The structural and compositional modifications ... -
Effects of the surface deposition of nitrogen on the thermal oxidation of silicon in O/sub 2
(1998) [Artículo de periódico]Nitrogen was deposited on the surface layers of Si(100) by ion implantation at a very low energy (approximately 20 eV), at fluences between 1 and 1031014 cm-². The samples were thermally oxidized in dry O2 at 1050 °C, and ... -
Enhanced hydrogen bonding stregth observed in hydrogenated SiC and SiO2/SiC structures
(2007) [Artículo de periódico]Thermally induced H incorporation, depth distribution, and loss in SiC and in thermally grown SiO2 films on SiC were investigated using isotopic substitution and nuclear reaction analyses. Hydrogen deuterium is found near ... -
Enhancement in interface robustness regarding thermal oxidation in nanostructured Al2O3 deposited on 4H-SiC
(2009) [Artículo de periódico]Experimental evidences of enhanced stability of Al2O3 /SiC structures following thermal annealing are presented. 5- and 40-nm-thick Al2O3 films evaporated on the Si- and C-terminated faces of 4H-SiC were annealed up to ... -
GeO2/Ge structure submitted to annealing in deuterium : incorporation pathways and associated oxide modifications
(2014) [Artículo de periódico]Deuterium (D) incorporation in GeO2/Ge structures following D2 annealing was investigated. Higher D concentrations were obtained for GeO2/Ge samples in comparison to their SiO2/Si counterparts annealed in the same conditions. ... -
Improvement of SiO2/4H-SiC interface properties by oxidation using hydrogen peroxide
(2009) [Artículo de periódico]The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrates has been investigated. In comparison to conventional oxide growth using H2O, we found that the interface trap density ... -
Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies
(2001) [Artículo de periódico]Initial stages of oxidation of single-crystal, Si-faced silicon carbide were investigated using ion scattering and angle-resolved x-ray photoelectron spectroscopies. The very first oxidation products are shown to be silicon ... -
Interaction of HfO/sub 2//SiO/sub 2/Si structures with deuterium gas
(2006) [Artículo de periódico]HfO2 films 2.5 to 12 nm deposited on thermal SiO2 1.5 nm on Si were annealed in deuterium gas at 400–600 °C and incorporated D amounts were quantified using the D 3He, p 4He nuclear reaction.We found 1013 D cm−2 in the ... -
Interaction of SiC thermal oxidation by-products with SiO2
(2008) [Artículo de periódico]We investigated oxygen incorporation and exchange during thermal growth of silicon oxide films on silicon carbide. This investigation was carried out in parallel with the thermal growth of silicon oxide films on silicon ... -
Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001) : role of the substrate
(2011) [Artículo de periódico]Thermally driven atomic transport in HfO2 /GeO2/substrate structures on Ge 001 and Si 001 was investigated in N2 ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing ... -
Isotopic substitution of N, O, and Si in the thermal oxidation of nitrogen-deposited silicon
(1999) [Artículo de periódico]Nitrogen was deposited on the surface of Si~100! wafers by ion implantation at a very low energy (approximately 20 eV), at fluences between 1 and 1031014 cm22. The samples were thermally oxidized in dry O2 at temperatures ... -
Limiting step involved in the thermal growth of silicon oxide films on silicon carbide
(2002) [Artículo de periódico]Thermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopic substitution and narrow resonance nuclear reaction profiling. This investigation was carried out in parallel with the ... -
Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses
(2006) [Artículo de periódico]Metal transport and loss induced by thermal annealing in ultrathin HfAlxOy films deposited on Si by atomic layer deposition were investigated by ion beam analysis. It was observed that rapid thermal annealing at 1000 °C ... -
Morphological and compositional changes in the SiO/sub 2//SiC interface region induced by oxide thermal growth
(2006) [Artículo de periódico]Changes in morphology and composition of interfacial regions of thermally grown SiO2 films on SiC in dry O2 induced by reoxidations were investigated using atomic force microscopy and oxygen profiling. The gradual oxygen ... -
Oxygen transport and GeO2 stability during thermal oxidation of Ge
(2012) [Artículo de periódico]Oxygen transport during thermal oxidation of Ge and desorption of the formed Ge oxide are investigated. Higher oxidation temperatures and lower oxygen pressures promote GeO desorption. An appreciable fraction of oxidized ...
