Listar Ciencias Exactas y Naturales por autor "Jagadish, Chenupati"

Mostrando ítems 1-6 de 6

    • Characterization of deep level traps responsible for isolation of proton implanted GaAs 

      Boudinov, Henri Ivanov; Coelho, Artur Vicente Pfeifer; Tan, Hoe H.; Jagadish, Chenupati (2003) [Artículo de periódico]
      Deep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability ...

    • Effect of irradiation temperature and ion flux on electrical isolation of GaN 

      Kucheyev, Sergei O.; Boudinov, Henri Ivanov; Williams, J.S.; Jagadish, Chenupati; Li, Gang (2002) [Artículo de periódico]
      We study the evolution of sheet resistance of n-type GaN epilayers irradiated with MeV 1H and 12C ions. Results show that both implantation temperature (varied from 77 up to 423 K) and ion beam flux affect the process of ...

    • Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation 

      Van Lippen, Twan; Boudinov, Henri Ivanov; Tan, Hoe H.; Jagadish, Chenupati (2002) [Artículo de periódico]
      The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa12xAs layers (x=0.3, 0.6, and 1.0) during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly ...

    • Electrical isolation of GaN by MeV ion irradiation 

      Boudinov, Henri Ivanov; Kucheyev, Sergei O.; Williams, J.S.; Jagadish, Chenupati; Li, Gang (2001) [Artículo de periódico]
      The evolution of sheet resistance of n-type GaN epilayers exposed to irradiation with MeV H, Li, C, and O ions is studied in situ. Results show that the threshold dose necessary for complete isolation linearly depends on ...

    • Electrical isolation of n-type and p-type InP layers by proton bombardment 

      Boudinov, Henri Ivanov; Tan, Hoe H.; Jagadish, Chenupati (2001) [Artículo de periódico]
      The evolution of the sheet resistance (Rs) of n-type and p-type conductive InP layers during proton irradiation and the stability of the formed isolation during postirradiation annealing were investigated. It was found ...

    • Ultrafast trapping times in ion implanted InP 

      Carmody, Christine; Boudinov, Henri Ivanov; Tan, Hoe H.; Jagadish, Chenupati; Lederer, Max J.; Koley, Vesselin; Luther-Davies, B.; Dao, L.V.; Gal, Michael (2002) [Artículo de periódico]
      As+ and P+ implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of ...