Browsing Exact and Earth Sciences by Author "Driemeier, Carlos Eduardo"
Now showing items 1-15 of 15
-
Compositional stability of hafnium aluminates thin films deposited on Si by atomic layer deposition
(2005) [Journal article]We have used nuclear reaction analyses and Rutherford backscattering spectrometry to investigate quantitatively the compositional stability of hafnium aluminate thin films deposited on Sis001d by atomic layer deposition ... -
Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si
(2005) [Journal article]LaAlO3 films were deposited on p-type Si 100 by sputtering from a LaAlO3 target. C V characteristics were determined in nonannealed and O2-annealed capacitors having LaAlO3 films as dielectric and RuO2 as top electrode. ... -
Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling
(2004) [Journal article]HfSiON films deposited on Si (001) by reactive sputtering were submitted to rapid thermal annealing at 1000 °C in vacuum, N2 and O2 atmospheres. The stability of the dielectric was evaluated by measuring the atomic transport ... -
Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon
(2004) [Journal article]Hydrogen and deuterium incorporation into nitrided and non-nitrided hafnium silicate films on Si during thermal annealing in 1H- and 2H-containing atmospheres was investigated. 1H profiling was accessed by means of nuclear ... -
Hydrogen trapping in oxigen-deficient hafnium silicates
(2007) [Journal article]Isotopic substitution, nuclear reaction analysis, and x-ray photoelectron spectroscopy were employed to show that oxygen-deficient hafnium (Hf) silicates trap hydrogen atoms. Based on this experimental observation, we used ... -
Interaction of HfO/sub 2//SiO/sub 2/Si structures with deuterium gas
(2006) [Journal article]HfO2 films 2.5 to 12 nm deposited on thermal SiO2 1.5 nm on Si were annealed in deuterium gas at 400–600 °C and incorporated D amounts were quantified using the D 3He, p 4He nuclear reaction.We found 1013 D cm−2 in the ... -
Interaction of SiC thermal oxidation by-products with SiO2
(2008) [Journal article]We investigated oxygen incorporation and exchange during thermal growth of silicon oxide films on silicon carbide. This investigation was carried out in parallel with the thermal growth of silicon oxide films on silicon ... -
Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses
(2006) [Journal article]Metal transport and loss induced by thermal annealing in ultrathin HfAlxOy films deposited on Si by atomic layer deposition were investigated by ion beam analysis. It was observed that rapid thermal annealing at 1000 °C ... -
Nitrogen bonding, stability, and transport in AION films on Si
(2004) [Journal article]The chemical environment of N in nitrided aluminum oxide films on Si~001! was investigated by angle-resolved x-ray photoelectron spectroscopy. Two different bonding configurations were identified, namely N–Al and N–O–Al, ... -
Nitrogen diffusion enhancement in a ferrous alloy by deuterium isotopic effect
(2007) [Journal article]Studies of nitrogen implantation in an iron alloy using photoemission electron spectroscopy, sputtered neutral mass spectrometry, and elastic recoil detection analysis, reveal an enhancement of nitrogen diffusion when ... -
Optical band gaps and composition dependence of hafnium–aluminate thin films grown by atomic layer chemical vapor deposition
(2005) [Journal article]We report the optical properties of unannealed hafnium–aluminate HfAlO films grown by atomic layer chemical vapor deposition ALCVD and correlate them with the aluminum contents in the films. Vacuum ultraviolet spectroscopic ... -
Oxygen species in HfO/sub 2/ films : an in situ x-ray photoelectron spectroscopy study
(2007) [Journal article]The chemical bonding of O atoms in HfO2 films on Si was investigated by in situ x-ray photoelectron spectroscopy in the O 1s spectral region. In addition to trivial O forming only O-Hf bonds, O 1s signals corresponding to ... -
Room temperature interactions of water vapor with HfO/sub 2/ films on Si
(2006) [Journal article]HfO2 /SiO2/Si 001 thin film structures were exposed at room temperature to water vapor isotopically enriched in 2H and 18O followed by quantification and profiling of these nuclides by nuclear reaction analysis. We showed ... -
Thermal stability of plasma-nitrided aluminum oxide films on Si
(2004) [Journal article]The effect of post-deposition rapid thermal annealing in vacuum and in dry O2 on the stability of remote plasma-assisted nitrided aluminum oxide films on silicon is investigated. The areal densities of Al, O, N, and Si ... -
Thermochemical behavior of hydrogen in hafnium silicate films on Si
(2006) [Journal article]HfSiO films on Si were sequentially annealed in vacuum, oxygen, hydrogen, or deuterium atmospheres followed by quantification of H and D by nuclear reaction analysis. The observed H D incorporation and desorption behaviors ...
