Turn on of new electronic paths in Fe-SiO2 granular thin film

Abstract

The electrical properties of Fe-SiO2 have been studied in the low-field regime (eDV kBT), varying the injected current and the bias potential. Superparamagnetism and a resistance drop of 4400X (for a voltage variation of 15 V) were observed at room temperature. This resistance drop increased at lower temperatures. The electrical properties were described with the “Mott variable range hopping” model explaining the behavior of the electrical resistance and the electronic localization length as due to the activation of new electronic paths between more distant grains. This non-ohmic resistance at room temperature can be important for properties dependent of electrical current (magnetoresistance, Hall effect, and magnetoimpedance).