Low temperature aging effects on the formation of Sn nanoclusters in SiO/sub 2/Si films and interfaces

Abstract

The formation of Sn nanocrystals NCs in ion implanted SiO2 /Si films is investigated using Rutherford backscattering spectrometry and transmission electron microscopy. Low temperature and long time aging treatments followed by high temperature thermal annealings lead to the formation of a dense bidimensional NC array located at the SiO2 /Si interface. This behavior is discussed considering the formation of small Sn clusters with a significantly improved thermal stability. The present experimental results are in good agreement with recent theoretical predictions that small Sn clusters can have their melting temperature enhanced in more than 1000 °C.