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Low temperature aging effects on the formation of Sn nanoclusters in SiO/sub 2/Si films and interfaces

dc.contributor.authorKremer, Felipept_BR
dc.contributor.authorLopes, João Marcelo Jordãopt_BR
dc.contributor.authorZawislak, Fernando Claudiopt_BR
dc.contributor.authorFichtner, Paulo Fernando Papaleopt_BR
dc.date.accessioned2016-05-24T02:11:15Zpt_BR
dc.date.issued2007pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141779pt_BR
dc.description.abstractThe formation of Sn nanocrystals NCs in ion implanted SiO2 /Si films is investigated using Rutherford backscattering spectrometry and transmission electron microscopy. Low temperature and long time aging treatments followed by high temperature thermal annealings lead to the formation of a dense bidimensional NC array located at the SiO2 /Si interface. This behavior is discussed considering the formation of small Sn clusters with a significantly improved thermal stability. The present experimental results are in good agreement with recent theoretical predictions that small Sn clusters can have their melting temperature enhanced in more than 1000 °C.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. Vol. 91, no. 8 (Aug. 2007), 083102, 3 p.pt_BR
dc.rightsOpen Accessen
dc.subjectNanocristaispt_BR
dc.subjectBaixas temperaturaspt_BR
dc.subjectFilmes finos metalicospt_BR
dc.titleLow temperature aging effects on the formation of Sn nanoclusters in SiO/sub 2/Si films and interfacespt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000604387pt_BR
dc.type.originEstrangeiropt_BR


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