Improvement of SiO2/4H-SiC interface properties by oxidation using hydrogen peroxide
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Date
2009Author
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Abstract
The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrates has been investigated. In comparison to conventional oxide growth using H2O, we found that the interface trap density is reduced close to the conduction band edge of 4H-SiC. This electrical improvement is correlated with the decrease in SiCxOy compounds at the SiO2 /4H-SiC interface region as confirmed by two independent methods. These results point to the use of H2O2 as an alternative passiva ...
The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrates has been investigated. In comparison to conventional oxide growth using H2O, we found that the interface trap density is reduced close to the conduction band edge of 4H-SiC. This electrical improvement is correlated with the decrease in SiCxOy compounds at the SiO2 /4H-SiC interface region as confirmed by two independent methods. These results point to the use of H2O2 as an alternative passivating agent of SiO2 /4H-SiC interface electrically active defects. ...
In
Applied physics letters. New York. Vol. 95, no. 11 (Sept. 2009), 113504, 3 p.
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Foreign
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