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Sequential thermal treatments of SiC in NO and O2 : atomic transport and electrical characteristics
dc.contributor.author | Soares, Gabriel Vieira | pt_BR |
dc.contributor.author | Baumvol, Israel Jacob Rabin | pt_BR |
dc.contributor.author | Hold, L. | pt_BR |
dc.contributor.author | Kong, F. | pt_BR |
dc.contributor.author | Han, J. | pt_BR |
dc.contributor.author | Dimitrijev, Sima | pt_BR |
dc.contributor.author | Radtke, Claudio | pt_BR |
dc.contributor.author | Stedile, Fernanda Chiarello | pt_BR |
dc.date.accessioned | 2016-05-24T02:10:51Z | pt_BR |
dc.date.issued | 2007 | pt_BR |
dc.identifier.issn | 0003-6951 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/141715 | pt_BR |
dc.description.abstract | Sequential thermal oxidations and oxynitridations of SiC were performed using 18O2 and NO. The resulting films were characterized by x-ray photoelectron spectroscopy, ion beam analyses, and capacitance-voltage measurements. The best electrical characteristics were obtained from films directly grown in NO. A subsequent oxidation in O2 degraded the interface due to negative flatband-voltage shift, removal of N, and formation of C compounds, while a further annealing in NO brought the flatband shift in the C-V curves to rather moderate figures. This shift is related to competitive processes taking place during dielectric film formation which are discussed. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Applied physics letters. Vol. 91, no. 4 (July 2007), 041906, 3 p. | pt_BR |
dc.rights | Open Access | en |
dc.subject | Carbeto de silício | pt_BR |
dc.subject | Oxidação | pt_BR |
dc.title | Sequential thermal treatments of SiC in NO and O2 : atomic transport and electrical characteristics | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000598386 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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