Room temperature interactions of water vapor with HfO/sub 2/ films on Si

dc.contributor.author	Driemeier, Carlos Eduardo	pt_BR
dc.contributor.author	Gusev, Evgeni P.	pt_BR
dc.contributor.author	Baumvol, Israel Jacob Rabin	pt_BR
dc.date.accessioned	2016-05-20T02:10:59Z	pt_BR
dc.date.issued	2006	pt_BR
dc.identifier.issn	0003-6951	pt_BR
dc.identifier.uri	http://hdl.handle.net/10183/141461	pt_BR
dc.description.abstract	HfO2 /SiO2/Si 001 thin film structures were exposed at room temperature to water vapor isotopically enriched in 2H and 18O followed by quantification and profiling of these nuclides by nuclear reaction analysis. We showed i the formation of strongly bonded hydroxyls at the HfO2 surface; ii room temperature migration of oxygen and water-derived oxygenous species through the HfO2 films, indicating that HfO2 is a weak diffusion barrier for these oxidizing species; iii hydrogenous, water-derived species attachment to the SiO2 interlayer, resulting in detrimental hydrogenous defects therein. Consequences of these results to HfO2-based metal-oxide-semiconductor devices are discussed.	en
dc.format.mimetype	application/pdf	pt_BR
dc.language.iso	eng	pt_BR
dc.relation.ispartof	Applied Physics Letters. New York. Vol. 88, no. 20 (May 2006), 201901, 3 p.	pt_BR
dc.rights	Open Access	en
dc.subject	Física	pt_BR
dc.title	Room temperature interactions of water vapor with HfO/sub 2/ films on Si	pt_BR
dc.type	Artigo de periódico	pt_BR
dc.identifier.nrb	000564735	pt_BR
dc.type.origin	Estrangeiro	pt_BR

Este ítem está licenciado en la Creative Commons License