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Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si

dc.contributor.authorMiotti, Leonardopt_BR
dc.contributor.authorBastos, Karen Pazpt_BR
dc.contributor.authorDriemeier, Carlos Eduardopt_BR
dc.contributor.authorEdon, Vincentpt_BR
dc.contributor.authorHugon, Marie-Christinept_BR
dc.contributor.authorAgius, Bernardpt_BR
dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.date.accessioned2016-05-19T02:10:05Zpt_BR
dc.date.issued2005pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141348pt_BR
dc.description.abstractLaAlO3 films were deposited on p-type Si 100 by sputtering from a LaAlO3 target. C V characteristics were determined in nonannealed and O2-annealed capacitors having LaAlO3 films as dielectric and RuO2 as top electrode. Thermal annealing in O2 atmosphere reduced flat band voltage to acceptable values for advanced Si-based devices. 16O–18O isotopic substitution was characterized by Rutherford backscattering spectrometry and nuclear resonant reaction profiling. Chemical analysis of the films was accomplished by x-ray photoelectron spectroscopy. The electrical improvements observed after thermal annealing in O2 were attributed to the incorporation of oxygen from the gas phase, possibly healing oxygen vacancies in the films and providing mobile oxygen to the interfaceen
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied Physics Letters. New York. Vol. 87, no. 2 (July 2005), 022901, 3 p.pt_BR
dc.rightsOpen Accessen
dc.subjectFísica da matéria condensadapt_BR
dc.subjectAnálise químicapt_BR
dc.subjectTrocas químicaspt_BR
dc.subjectMateriais dielétricospt_BR
dc.subjectFilmes finos dieletricospt_BR
dc.subjectSemicondutores elementarespt_BR
dc.subjectRetroespalhamento rutherfordpt_BR
dc.subjectInterfaces semicondutor-isolantept_BR
dc.subjectSilíciopt_BR
dc.subjectVacancias cristalpt_BR
dc.subjectEspectros de raio x de fotoeletronspt_BR
dc.subjectDeposição por sputteringpt_BR
dc.titleEffects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Sipt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000530614pt_BR
dc.type.originEstrangeiropt_BR


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