Environment of hafnium and silicon in Hf-based dielectric films : an atomistic study by x-ray absorption spectroscopy and x-ray diffraction
Fecha
2005Autor
Materia
Abstract
The atomic structure of HfSiO and HfSiON was investigated before and after thermal annealing using x-ray diffraction and x-ray absorption spectroscopy. In HfSiO, the Hf atoms are arranged in a monoclinic HfO2 structure with Hf as second nearest neighbors, while Si is in a SiO2 environment. Thermal annealing induces crystallization of HfSiO with subtle changes in Hf–Hf distances. In the case of HfSiON, a stable structure is observed around the Hf atoms, which remains unaffected after annealing. ...
The atomic structure of HfSiO and HfSiON was investigated before and after thermal annealing using x-ray diffraction and x-ray absorption spectroscopy. In HfSiO, the Hf atoms are arranged in a monoclinic HfO2 structure with Hf as second nearest neighbors, while Si is in a SiO2 environment. Thermal annealing induces crystallization of HfSiO with subtle changes in Hf–Hf distances. In the case of HfSiON, a stable structure is observed around the Hf atoms, which remains unaffected after annealing. Nitrogen is present in the first coordination shell of the Hf atoms, with Si in a SiON environment. ...
En
Applied physics letters. New York. Vol. 86, no. 21 (May 2005), 212906, 3 p.
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