Comparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structures
dc.contributor.author | McDonald, K. | pt_BR |
dc.contributor.author | Huang, M.B. | pt_BR |
dc.contributor.author | Weller, R.A. | pt_BR |
dc.contributor.author | Feldman, L.C. | pt_BR |
dc.contributor.author | Williams, J.R. | pt_BR |
dc.contributor.author | Stedile, Fernanda Chiarello | pt_BR |
dc.contributor.author | Baumvol, Israel Jacob Rabin | pt_BR |
dc.contributor.author | Radtke, Claudio | pt_BR |
dc.date.accessioned | 2016-05-14T02:08:03Z | pt_BR |
dc.date.issued | 2000 | pt_BR |
dc.identifier.issn | 0003-6951 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/141103 | pt_BR |
dc.description.abstract | The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N2O incorporates ~1013 cm22 of N and annealing in NO incorporates ~1014 cm-2, both of which are an order of magnitude lower than in SiO2/Si. In the NO anneal, N is predominantly incorporated near the SiO2/SiC interface with an atomic concentration of ~0.5%. As in the nitridation of SiO2/Si, two features are observed in SiO2/SiC after the NO anneal: a surface exchange of O in the oxide with the gas phase and NO diffusion and reaction at the interface. The surface exchange reaction in SiO2/SiC is similar to SiO2/Si, but there is a large difference in the incorporation of N at the interface. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Applied physics letters. Melville. Vol. 76, no. 5 (Jan. 2000), p. 568-570 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Recozimento | pt_BR |
dc.subject | Interdifusao quimica | pt_BR |
dc.subject | Dopagem de semicondutores | pt_BR |
dc.subject | Interfaces semicondutor-isolante | pt_BR |
dc.subject | Trocas químicas | pt_BR |
dc.subject | Nitretação | pt_BR |
dc.subject | Interfaces | pt_BR |
dc.subject | Análise química nuclear | pt_BR |
dc.subject | Filmes finos | pt_BR |
dc.subject | Silício | pt_BR |
dc.subject | Nitrogênio | pt_BR |
dc.subject | Oxidação | pt_BR |
dc.title | Comparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structures | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000269708 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
Files in this item
This item is licensed under a Creative Commons License
-
Journal Articles (39951)Exact and Earth Sciences (6085)