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Effects of carbon on dynamic annealing and on electrical activation of dopants in silicon substrate
dc.contributor.author | Souza, Joel Pereira de | pt_BR |
dc.contributor.author | Boudinov, Henri Ivanov | pt_BR |
dc.contributor.author | Fichtner, Paulo Fernando Papaleo | pt_BR |
dc.date.accessioned | 2015-06-18T02:01:03Z | pt_BR |
dc.date.issued | 1994 | pt_BR |
dc.identifier.issn | 0103-9733 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/117946 | pt_BR |
dc.description.abstract | The effect of C on the implantation damage accumulation in Si crystal and on the electrical T activation of dopants was investigated, using RBS-channeling technique, sheet resistivity and Hall measurements. The damage profiles in Si implanted with 12C+ or llBS at 50 keV to the same doses and dose rate were compared. It was found that the damage accumulates at a noticeably higher rate during 12c+im plantation than in the case of "B+, especially for doses > 2 x I0l5 ~rn-~I t. i s shown that the dynamic annealing is strongly reduced in regions doped with C. In addition, the influence of C on the electrical activation of the co-implanted dopant is discussed for the case of B and Bi. A model considering an interaction between C and Si self-interstitial (Sir) atoms during implantation and the subsequent thermal annealing is proposed to explain the enhanced implantation damage accumulation and the activation behavior of B in samples co-implanted with C | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Brazilian journal of physics. São Paulo. Vol. 24, no. 2 (June 1994), p. 538-542 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Física da matéria condensada | pt_BR |
dc.subject | Implantação de íons | pt_BR |
dc.title | Effects of carbon on dynamic annealing and on electrical activation of dopants in silicon substrate | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000220163 | pt_BR |
dc.type.origin | Nacional | pt_BR |
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