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dc.contributor.authorSouza, Joel Pereira dept_BR
dc.contributor.authorBoudinov, Henri Ivanovpt_BR
dc.contributor.authorFichtner, Paulo Fernando Papaleopt_BR
dc.date.accessioned2015-06-18T02:01:03Zpt_BR
dc.date.issued1994pt_BR
dc.identifier.issn0103-9733pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/117946pt_BR
dc.description.abstractThe effect of C on the implantation damage accumulation in Si crystal and on the electrical T activation of dopants was investigated, using RBS-channeling technique, sheet resistivity and Hall measurements. The damage profiles in Si implanted with 12C+ or llBS at 50 keV to the same doses and dose rate were compared. It was found that the damage accumulates at a noticeably higher rate during 12c+im plantation than in the case of "B+, especially for doses > 2 x I0l5 ~rn-~I t. i s shown that the dynamic annealing is strongly reduced in regions doped with C. In addition, the influence of C on the electrical activation of the co-implanted dopant is discussed for the case of B and Bi. A model considering an interaction between C and Si self-interstitial (Sir) atoms during implantation and the subsequent thermal annealing is proposed to explain the enhanced implantation damage accumulation and the activation behavior of B in samples co-implanted with Cen
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofBrazilian journal of physics. São Paulo. Vol. 24, no. 2 (June 1994), p. 538-542pt_BR
dc.rightsOpen Accessen
dc.subjectFísica da matéria condensadapt_BR
dc.subjectImplantação de íonspt_BR
dc.titleEffects of carbon on dynamic annealing and on electrical activation of dopants in silicon substratept_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000220163pt_BR
dc.type.originNacionalpt_BR


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