Dynamics of thermal growth of silicon oxide films on Si
Visualizar/abrir
Data
2000Autor
Tipo
Abstract
Thermal growth of silicon oxide films on Si in dry O₂ is modeled as a dynamical system, assuming that it is basically a reaction-diffusion phenomenon. Relevant findings of the last decade are incorporated, as structure and composition of the oxide/Si interface and O₂ transport and reaction at initial stages of growth. The present model departs from the well-established Deal and Grove framework [B. E. Deal and A. S. Grove, J. Appl. Phys. 36, 3770 (1965)] indicating that its basic assumptions, st ...
Thermal growth of silicon oxide films on Si in dry O₂ is modeled as a dynamical system, assuming that it is basically a reaction-diffusion phenomenon. Relevant findings of the last decade are incorporated, as structure and composition of the oxide/Si interface and O₂ transport and reaction at initial stages of growth. The present model departs from the well-established Deal and Grove framework [B. E. Deal and A. S. Grove, J. Appl. Phys. 36, 3770 (1965)] indicating that its basic assumptions, steady-state regime, and reaction between O₂ and Si at a sharp oxide/Si interface are only attained asymptotically. Scaling properties of these model equations are explored, and experimental growth kinetics, obtained for a wide range of growth parameters including the small thickness range, are shown to be well described by the model. ...
Contido em
Physical review. B, Condensed matter and materials physics. Woodbury. Vol. 61, no. 19 (May 2000), p. 12992-12999
Origem
Estrangeiro
Coleções
-
Artigos de Periódicos (39558)Ciências Exatas e da Terra (6036)
Este item está licenciado na Creative Commons License