Reaction-diffusion model for thermal growth of silicon nitride films on Si
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2000Type
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Abstract
Thermal growth of ultrathin silicon nitride films on Si in NH₃ is modeled as a dynamic system governed by reaction-diffusion equations. Solution of the model yields profiles of the involved species consistent with experimental observations of a stoichiometric silicon nitride layer in the near-surface region and a subnitride layer of comparable thickness in the near-interface region. Self-limited growth kinetics are also obtained from the model equations in good agreement with experimental resul ...
Thermal growth of ultrathin silicon nitride films on Si in NH₃ is modeled as a dynamic system governed by reaction-diffusion equations. Solution of the model yields profiles of the involved species consistent with experimental observations of a stoichiometric silicon nitride layer in the near-surface region and a subnitride layer of comparable thickness in the near-interface region. Self-limited growth kinetics are also obtained from the model equations in good agreement with experimental results, owing to a diffusion barrier layer to the nitridant species formed in the near-surface region by stoichiometric silicon nitride. ...
In
Physical review. B, Condensed matter and materials physics. Woodbury. Vol. 62, no. 24 (Dec. 2000), p. R16255-R16258
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