Atomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on Si
dc.contributor.author | Krug, Cristiano | pt_BR |
dc.contributor.author | Rosa, Elisa Brod Oliveira da | pt_BR |
dc.contributor.author | Almeida, Rita Maria Cunha de | pt_BR |
dc.contributor.author | Morais, Jonder | pt_BR |
dc.contributor.author | Baumvol, Israel Jacob Rabin | pt_BR |
dc.contributor.author | Salgado, Tania Denise Miskinis | pt_BR |
dc.contributor.author | Stedile, Fernanda Chiarello | pt_BR |
dc.date.accessioned | 2014-08-12T02:10:22Z | pt_BR |
dc.date.issued | 2000 | pt_BR |
dc.identifier.issn | 0031-9007 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/100092 | pt_BR |
dc.description.abstract | Ultrathin films of Al₂O₃ deposited on Si were submitted to rapid thermal annealing in vacuum or in oxygen atmosphere, in the temperature range from 600 to 800 °C. Nuclear reaction profiling with subnanometric depth resolution evidenced mobility of O, Al, and Si species, and angle-resolved x-ray photoelectron spectroscopy revealed the formation of Si-Al-O compounds in near-surface regions, under oxidizing atmosphere at and above 700 °C. Under vacuum annealing all species remained essentially immobile. A model is presented based on diffusion-reaction equations capable of explaining the mobilities and reproducing the obtained profiles. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Physical review letters. Melville. Vol. 85, no. 19 (Nov. 2000), p. 4120-4123 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Física | pt_BR |
dc.subject | Filmes finos | pt_BR |
dc.subject | Silício | pt_BR |
dc.subject | Tratamento térmico | pt_BR |
dc.title | Atomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on Si | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000279172 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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