Comment on "Atomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on Si" : reply

dc.contributor.author	Krug, Cristiano	pt_BR
dc.contributor.author	Rosa, Elisa Brod Oliveira da	pt_BR
dc.contributor.author	Almeida, Rita Maria Cunha de	pt_BR
dc.contributor.author	Morais, Jonder	pt_BR
dc.contributor.author	Baumvol, Israel Jacob Rabin	pt_BR
dc.contributor.author	Salgado, Tania Denise Miskinis	pt_BR
dc.contributor.author	Stedile, Fernanda Chiarello	pt_BR
dc.date.accessioned	2014-08-12T02:10:21Z	pt_BR
dc.date.issued	2001	pt_BR
dc.identifier.issn	0031-9007	pt_BR
dc.identifier.uri	http://hdl.handle.net/10183/100091	pt_BR
dc.format.mimetype	application/pdf	pt_BR
dc.language.iso	eng	pt_BR
dc.relation.ispartof	Physical review letters. Woodbury. Vol. 86, no. 20 (May 2001), p. 4714	pt_BR
dc.rights	Open Access	en
dc.subject	Alumina	pt_BR
dc.subject	Recozimento	pt_BR
dc.subject	Oxidação	pt_BR
dc.subject	Interface semicondutor-isolante	pt_BR
dc.subject	Filmes finos	pt_BR
dc.subject	Silício	pt_BR
dc.subject	Tratamento térmico	pt_BR
dc.title	Comment on "Atomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on Si" : reply	pt_BR
dc.type	Artigo de periódico	pt_BR
dc.identifier.nrb	000292758	pt_BR
dc.type.origin	Estrangeiro	pt_BR

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