Navegação por Assunto "Interdifusao quimica"

Resultados 1-8 de 8

    • Aluminum mobility and interfacial segregation in fully silicided gate contacts 

      Pezzi, Rafael Peretti; Copel, Matthew; Cabral Junior, C.; Baumvol, Israel Jacob Rabin (2005) [Artigo de periódico]
      The mobility of aluminum implanted as a dopant of fully silicided nickel for advanced metal gates has been investigated following rapid thermal annealing at temperatures ranging from 160 to 700 °C. Resonant nuclear reaction ...

    • Comparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structures 

      McDonald, K.; Huang, M.B.; Weller, R.A.; Feldman, L.C.; Williams, J.R.; Stedile, Fernanda Chiarello; Baumvol, Israel Jacob Rabin; Radtke, Claudio (2000) [Artigo de periódico]
      The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 ...

    • Composition, atomic transport, and chemical stability of ZrAl/sub x/O/sub y/ ultrathin films deposited on Si(001) 

      Morais, Jonder; Rosa, Elisa Brod Oliveira da; Pezzi, Rafael Peretti; Miotti, Leonardo; Baumvol, Israel Jacob Rabin (2001) [Artigo de periódico]
      The stability of a ZrAlxOy film sputtered on Si upon thermal annealing in vacuum or in O2 was investigated. X-ray diffraction indicated that the as-deposited film was amorphous and remained so after annealing. Rutherford ...

    • Diffusion reaction of oxigen in aluminum oxide films on silicon 

      Rosa, Elisa Brod Oliveira da; Baumvol, Israel Jacob Rabin; Morais, Jonder; Almeida, Rita Maria Cunha de; Papaleo, Ricardo Meurer; Stedile, Fernanda Chiarello (2002) [Artigo de periódico]
      Aluminum oxide films deposited on silicon by atomic layer chemical vapor deposition were annealed in an ¹⁸O-enriched oxygen atmosphere under various conditions of temperature, time, and pressure. Cavity formation at the ...

    • Effect of interface intermixing on giant magnetoresistance in NiFe/Cu and Co/NiFe/Co/Cu multilayers 

      Nagamine, Luiz Carlos Camargo Miranda; Biondo Filho, Armando; Pereira, Luis Gustavo; Silva, Alexandre Mello de Paula; Schmidt, Joao Edgar; Chimendes, Tiago Walescko; Cunha, Joao Batista Marimon da; Baggio-Saitovitch, E. (2003) [Artigo de periódico]
      This article reports on the important influence of the spontaneously built-in paramagnetic interfacial layers on the magnetic and magnetoresistive properties of NiFe/Cu and Co/NiFe/Co/Cu multilayers grown by magnetron ...

    • Formation of epitaxial [Beta]-Sn islands at the interface of SiO/sub 2/Si layers implanted with Sn ions 

      Lopes, João Marcelo Jordão; Zawislak, Fernando Claudio; Fichtner, Paulo Fernando Papaleo; Papaleo, Ricardo Meurer; Lovey, Francisco Carlos; Condó, Adriana M.; Tolley, Alfredo J. (2005) [Artigo de periódico]
      180 nm SiO2 layers on Si s100d were implanted with Sn ions producing a profile with a peak concentration of 3 at. % at the middle of the oxide. After high temperature s900–1100 °Cd annealing, an array of b-Sn islands ...

    • Mistura atômica na bicamada Fe/Al induzida por feixe de íons 

      Vasconcellos, Marcos Antonio Zen (1991) [Tese]
      Quando dirigimos nossa atenção ao deslocamento e rearranjo dos átomos de um alvo submetido à irradiação com feixe de Íons energéticos, designamos o fenômeno como Mistura Por Feixe De Íons, ou abreviadamente, IM ( do inglês ...

    • Thermal stability and diffusion in gadolinium silicate gate dielectric films 

      Landheer, Dolf; Wu, Xiaohua; Morais, Jonder; Baumvol, Israel Jacob Rabin; Pezzi, Rafael Peretti; Miotti, Leonardo; Lennard, W.N.; Kim, Joon-Kon (2001) [Artigo de periódico]
      Gadolinium silicate films on Si(100) annealed in oxygen and vacuum at temperatures up to 800 °C were analyzed by Rutherford backscattering and narrow resonance nuclear profiling. Oxygen diffused into the film eliminating ...