Navegação por Assunto "Recozimento"

Resultados 21-34 de 34

    • Gettering of copper in silicon at half of the projected ion range induced by helium implantation 

      Peeva, Anita; Fichtner, Paulo Fernando Papaleo; Silva, Douglas Langie da; Behar, Moni; Koegler, Reinhard; Skorupa, Wolfgang (2002) [Artigo de periódico]
      Secondary ion mass spectroscopy, transmission electron microscopy, Rutherford backscattering /channeling spectrometry, and elastic recoil detection analysis measurements were used to determine the Cu gettering behavior ...

    • Inhomogeneous structure and magnetic properties of granular Co/sub 10/Cu/sub 90/ alloys 

      Panissod, P.; Malinowska, M.; Jedryka, E.; Wojcik, M.; Nadolski, S.; Knobel, Marcelo; Schmidt, Joao Edgar (2001) [Artigo de periódico]
      Granular Co₁₀Cu₉₀ alloys displaying giant magnetoresistance have been obtained by melt spinning followed by an appropriate heat treatment in the range 0–700 °C. Their structural and magnetic properties have been studied ...

    • Investigação dos efeitos de recozimentos em atmosfera de argônio sobre a estrutura SiC/SiO2 

      Hansen, Lucas (2014) [Trabalho de conclusão de graduação]
      O carbeto de silício (SiC) é um semicondutor que vem despertando o interesse da indústria eletrônica devido ao bom desempenho que apresenta em condições de altas temperaturas, potências e frequências. É também muito duro ...

    • Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures : evidence of ion beam induced annealing 

      Souza, Joel Pereira de; Suprun-Belevich, Yu.; Boudinov, Henri Ivanov; Cima, Carlos Alberto (2001) [Artigo de periódico]
      The accumulation of damage and the development of mechanical strain in crystalline Si (c-Si) by O and N ion implantation to doses up to 431017 cm-² at elevated temperatures have been studied using Rutherford backscattering ...

    • Nucleação e crescimento de grãos em filmes de Al nanoestruturados 

      Luce, Flavia Piegas (2008) [Dissertação]
      A eletromigração é um dos principais problemas que limitam a vida útil dos dispositivos microeletrônicos. Normalmente o que se utiliza na indústria são interconexões feitas de filmes finos de Al e/ou Cu com estrutura ...

    • Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO/sub 2/ films annealed in O/sub 2/ 

      Bastos, Karen Paz; Morais, Jonder; Miotti, Leonardo; Pezzi, Rafael Peretti; Soares, Gabriel Vieira; Baumvol, Israel Jacob Rabin; Hegde, R.I.; Tseng, Hsing-Huang; Tobin, Phil J. (2002) [Artigo de periódico]
      Composition, atomic transport, and chemical reaction were investigated following annealing in O2 of ultrathin HfO2 films deposited on Si substrates thermally nitrided in NO. The as-prepared thin film composition was ...

    • Phase formation in Zr-Fe multilayers : effect of irradiation 

      Motta, Arthur T.; Paesano Junior, Andrea; Birtcher, R.C.; Brückmann, Magale Elisa; Teixeira, Sergio Ribeiro; Amaral, Livio (1999) [Artigo de periódico]
      We have conducted a detailed in situ study of phase formation in Zr–Fe metallic multilayers using irradiation and thermal annealing. Metallic multilayers with near equiatomic and Fe-rich overall compositions and with ...

    • Stability of zirconium silicate films on Si under vacuum and O/sub 2/ annealing 

      Morais, Jonder; Rosa, Elisa Brod Oliveira da; Miotti, Leonardo; Pezzi, Rafael Peretti; Baumvol, Israel Jacob Rabin; Rotondaro, Antonio L.P.; Bevan, M.J.; Colombo, Luigi (2001) [Artigo de periódico]
      The effect of postdeposition annealing in vacuum and in dry O2 on the atomic transport and chemical stability of chemical vapor deposited ZrSixOy films on Si is investigated. Rutherford backscattering spectrometry, narrow ...

    • Stress level in finemet materials studied by impedanciometry 

      Carara, Marcos Andre; Baibich, Mario Norberto; Sommer, Rubem Luis (2002) [Artigo de periódico]
      In this work, a study of the stress relief in Finemet ribbons, Fe73.5Cu1Nb3Si16.5B6, as a function of the annealing temperature is presented. The as melt-spun samples are amorphous and become partially crystallized after ...

    • Structural and Mössbauer characterization of the ball-milled Fe/sub x/(Al/sub 2/O/sub 3)/sub 100-x/ system 

      Paesano Junior, Andrea; Matsuda, Célia Kimie; Cótica, Luiz Fernando; Medeiros, Suzana Nóbrega de; Cunha, Joao Batista Marimon da; Hallouche, Bachir; Silva, Selma Luiza (2004) [Artigo de periódico]
      Metal-oxide composites were synthesized by high-energy ball milling of metallic iron (α-Fe) and alumina (α-Al2O3) powders, varying the starting relative concentration and the milling time. The samples were characterized ...

    • Thermal stability and diffusion in gadolinium silicate gate dielectric films 

      Landheer, Dolf; Wu, Xiaohua; Morais, Jonder; Baumvol, Israel Jacob Rabin; Pezzi, Rafael Peretti; Miotti, Leonardo; Lennard, W.N.; Kim, Joon-Kon (2001) [Artigo de periódico]
      Gadolinium silicate films on Si(100) annealed in oxygen and vacuum at temperatures up to 800 °C were analyzed by Rutherford backscattering and narrow resonance nuclear profiling. Oxygen diffused into the film eliminating ...

    • Transições de fase em compostos de estrutura aberta sob altas pressões 

      Perottoni, Claudio Antonio (2000) [Tese]
      Resumo não disponível.

    • Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation 

      Baumvol, Israel Jacob Rabin; Krug, Cristiano; Stedile, Fernanda Chiarello; Green, Martin L.; Jacobson, D.C.; Eaglesham, D.; Bernstein, J.D.; Shao, J.; Denholm, A.S.; Kellerman, P.L. (1999) [Artigo de periódico]
      A method is proposed to prepare ultrathin silicon oxynitride films for gate dielectrics used in deep submicron metal–oxide–semiconductor field effect transistor device structures, namely plasma immersion N implantation ...

    • X-ray-absorption spectroscopy and x-ray diffraction in discontinuous Co/sub x/Fe/sub 1-x//Ag multilayers 

      Flores, Wladimir Hernandez; Teixeira, Sergio Ribeiro; Cunha, Joao Batista Marimon da; Alves, Maria do Carmo Martins; Tolentino, Hélio Cesar Nogueira; Traverse, Agnes (2000) [Artigo de periódico]
      This paper reports on the structural properties of CoxFe12x /Ag discontinuous multilayers with x 50, 0.3, 0.7, and 1. The evolution of the structural properties has been investigated by x-ray diffraction and x-ray-absorption ...