Navegação por Assunto "Vacancias cristal"
Resultados 1-5 de 5
-
Cu gettering in ion implanted and annealed silicon in regions before and beyond the mean projected ion range
(2003) [Artigo de periódico]The strong gettering of Cu atoms in single-crystal Si implanted with 3.5 MeV P+ ions is studied after thermal treatment and Cu contamination. Cu decorates the remaining implantation damage. Three separate Cu gettering ... -
Defeitos pontuais nos compostos intermetálicos ZrNi e Zr/sub 2/Ni estudados por dinâmica molecular
(2002) [Tese]Empregamos a técnica de Dinâmica Molecular para estudar propriedades de defeitos pontuais nos compostos intermetálicos ZrNi e Zr2Ni. Descrevemos as configurações estáveis de defeitos e mecanismos de migração, assim como ... -
Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si
(2005) [Artigo de periódico]LaAlO3 films were deposited on p-type Si 100 by sputtering from a LaAlO3 target. C V characteristics were determined in nonannealed and O2-annealed capacitors having LaAlO3 films as dielectric and RuO2 as top electrode. ... -
Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature
(2005) [Artigo de periódico]A study of damage depth distribution in Si by elevated temperature O+-ion implantation was performed using three structures: (i) bulk Si, (ii) Si/SiO2 /bulk Si, and (iii) SiO2 /bulk Si. The samples were implanted at 250°C ... -
Specific heat and magnetic order in LaMnO/sub 3+[delta]/
(1999) [Artigo de periódico]Magnetic and specific-heat measurements are performed in three different samples of LaMnO₃₊[delta], with δ = 0.11, 0.15, and 0.26, presenting important disorder effects, such as carrier localization, due to high amounts ...
