Navegação por Assunto "FinFET"
Resultados 1-11 de 11
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Circuit-level approaches to mitigate the process variability and soft errors in finFET logic cells
(2019) [Tese]Process variability mitigation and radiation hardness are relevant reliability requirements as chip manufacturing advances more in-depth into the nanometer regime. The parameter yield loss and critical failures on system ... -
Circuit-level design impact on variability and soft errors robustness
(2020) [Dissertação]Physical limitations were found in MOSFET devices with the advancement in microelectronics. To overcome these limitations, multigate devices, such as the FinFET technology, were introduced, allowing the continuity of the ... -
Double-gate nanotransistors in silicon-on-insulator : simulation of sub-20 nm FinFETs
(2012) [Tese]Esta Tese apresenta os resultados da simulação do transporte eletrônico em três dimensões (3D) no nano dispositivo eletrônico conhecido como “SOI-FinFET”. Este dispositivo é um transistor MOS em tecnologia Silício sobre ... -
Evaluation of single event upset susceptibility of FinFET-based SRAMs with weak resistive defects
(2021) [Artigo de periódico]Fin Field-Efect Transistor (FinFET) technology enables the continuous downscaling of Integrated Circuits (ICs), using the Complementary Metal-Oxide Semiconductor (CMOS) technology in accordance with the More Moore domain. ... -
Impacto da variabilidade PVT em somadores construídos com XORs
(2020) [Dissertação]A operação de soma é a mais usada em Unidades Lógicas e Aritméticas (ULA). A ULA é a unidade mais importante no processamento de dados. Em sistemas digitais, é desejado um somador completo com baixo consumo de energia e ... -
Quantum-corrected Monte Carlo device simulator for n-type tri-gate transistors
(2023) [Tese]The dimensions of planar transistors were reduced until detrimental effects caused by the miniaturization of the transistor became significant. To address this issue, the microelectronics industry has changed the structure ... -
Radiation robustness of XOR and majority voter circuits at finFET technology under variability
(2017) [Dissertação]Advances in microelectronics have contributed to the size reduction of the technological node, lowering the threshold voltage and increasing the operating frequency of the systems. Although it has positive outcomes related ... -
Reliability evaluation of finFET-based SRAMs in the presence of resistive defects
(2021) [Tese]The development of Fin Field Effect Transistor (FinFET) has made possible the continuous scaling-down of Complementary Metal-Oxide-Semiconductor (CMOS) technology, overcoming issues caused by the Short-Channel Effects. In ... -
State-of-the-art 3-D Monte Carlo Device Simulation : from n-MOSFETs to n-FinFETs
(2021) [Tese]A novel 3-D TCAD Monte Carlo n-type semiconductor device simulator is presented in this work. The first step to achieve such comprehensive simulator was to develop a n-type bulk-Si simulator to be used as the basis for the ... -
Variabilidade em FinFETs
(2014) [Tese]Circuitos integrados VLSI (Very Large Scale Integration) usando nanotecnologia demandam novos materiais, estruturas, metodologias de projeto e ferramentas de CAD para lidar com os problemas decorrentes do processo de ... -
Variability and voltage scaling aware FinFET design
(2020) [Dissertação]Technology scaling alongside the increasing process variability impact in modern technology nodes are the main reasons to control deviations over metrics in IC nanometer designs. Also, given the increasing set of devices ...