Listar por tema "Fronteira entre semicondutor isolante"
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Integrity of hafnium silicate/silicon dioxide ultrathin films on Si
(2002) [Artículo de periódico]Rapid thermal annealing at 1000 °C of (HfO2)12x(SiO2)x pseudobinary alloy films deposited on Si were performed in N2 or O2 atmospheres. The effects on the atomic transport, structure, and composition were investigated using ...