Listar por tema "Crescimento epitaxial"
Mostrando ítems 1-11 de 11
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Epitaxial spin-valve structures for ultra-low-field detection
(1994) [Artículo de periódico]A new epitaxial “spin-valve”-type system for low-field magnetoresistive detection is described. This system is based on FeiPd epitaxial multilayers grown on (100)MgO by MBE. These films show a very abrupt transition from ... -
Ferromagnetic resonance of fe(111)/cu(111)multilayers
(1994) [Artículo de periódico]Ferromagnetic resonance at 9.4 GHz has been used to characterize several samples of Fe sing1e-crystal films and Fe/Cu multilayers prepared by electron-beam deposition on HF-etched, hydrogen-terminated Si(111). Resonance ... -
Formação de precipitados de FeSi2 epitaxiais com uma matriz de Si(001)
(1995) [Resumen publicado en evento] -
Patternig method for silicides based on local oxidation
(1995) [Artículo de periódico]Oxidation of CoSi2 layers on Si~100! using oxidation masks has been investigated. It is shown that local oxidation can be used to pattern the silicide layer. This method allows the formation of buried interconnects and ... -
Propriedades magnéticas de filmes finos e multicamadas à base de cobalto
(1995) [Resumen publicado en evento] -
Sequential phase formation by ion-induced epitaxy in fe-implanted si(001)
(1996) [Artículo de periódico]Ion-beam-induced epitaxial crystallization (IBIEC) of Fe-implanted Si(OO1) was studied by transmission electron microscopy and Rutherford backscattering spectrometry. For sufficiently high Fe doses, it was found that IBIEC ... -
Sequential phase formation by ion-induced epitaxy in fe-implanted si(001)
(1995) [Artículo de periódico]Ion-beam-induced epitaxial crystallization (IBIEC) of Fe-implanted Si(OO1) was studied by transmission electron microscopy and Rutherford backscattering spectrometry. For sufficiently high Fe doses, it was found that IBIEC ... -
Structural change and heteroepitaxy induced by rapid thermal annealing of CaF/sub 2/ films on Si(111)
(1998) [Artículo de periódico]In this article we show that heteroepitaxial CaF2 films can be induced on Si~111! with a rapid thermal anneal. The change from preferentially oriented polycrystals to a single crystal with type- B epitaxy is visible by ... -
Synthesis of GaN by N ion implantation in GaAs (001)
(1995) [Artículo de periódico]Both the hexagonal and cubic GaN phases were synthesized in GaAs ~001! by 50 keV N ion implantation at 380 °C and subsequent furnace annealing at 850–950 °C for 10 min–2 h. For a fluence of 1.531017 cm22, transmission ... -
The epitaxial growth of evaporated cu/caf2 bilayers on si(111)
(1995) [Artículo de periódico]Successful and unexpected epitaxial growth of Cu/CaF2, bilayers on hydrogen terminated Si(111) wafers by thermal evaporation is reported. The bilayers were characterized with conventional x-ray diffraction experiments, ... -
Transmission electron microscopy and photoluminescence studies of Er implated low-temperature grown GaAs:Be
(1998) [Artículo de periódico]Characteristic 1.54 mm 4f-4 f emission has been observed from Er31 centers in Er-implanted and annealed, low-temperature grown GaAs:Be samples, while cross-sectional transmission electron microscopy ~TEM! studies reveal ...