Listar por autor "Murel, A.V."
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Electrical activation of carbon in GaAs : implantation temperature effects
Danilov, Iuri; Souza, Joel Pereira de; Murel, A.V.; Pudenzi, Marcio Alberto Araujo (2001) [Artículo de periódico]Carbon was implanted into GaAs at the energy of 1 MeV with doses between 131013 and 2 31015 cm22 at temperatures of 80 K, nominal room temperature (RT), and 300 °C. A markedly higher electrical activation was obtained in ... -
Electrical isolation of a silicon [Delta]-doped layer in GaAs by ion irradiation
Danilov, Iuri; Souza, Joel Pereira de; Boudinov, Henri Ivanov; Murel, A.V.; Shashkin, V.I. (1999) [Artículo de periódico]The electrical isolation of a n-type d -doped layer embedded into undoped GaAs was studied using proton or helium ion bombardment. The threshold dose for isolation Dth of the d -doped layer was found to be '2 times higher ...