Browsing by Title
Now showing items 106259-106278 of 265730
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Electrical conductivity in electrodeposited Cu-Ge(O) alloy films
(2018) [Journal article]Integrated circuits currently use mainly copper as the interconnect material; unfortunately the ongoing miniaturization currently requires materials with higher electromigration resistance and possibly improved conductivity. ... -
Electrical fire risk indexing using fuzzy Petri nets
(2023) [Journal article]Electrical fires are a significant cause of dwelling fires, but the existing information on electrical fires is often vague and imprecise, making it challenging to develop a comprehensive risk assessment method. To address ... -
Electrical isolation in GaAs by light ion irradiation : the role of antisite defects
(1996) [Journal article]The evolution of the sheet resistance (Rs) in n-type GaAs layers during ion irradiation was studied using light mass projectiles like proton, deuterium, and helium ions at various energies. For all the cases, at the beginning ... -
Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation
(2002) [Journal article]The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa12xAs layers (x=0.3, 0.6, and 1.0) during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly ... -
Electrical isolation of a silicon [Delta]-doped layer in GaAs by ion irradiation
(1999) [Journal article]The electrical isolation of a n-type d -doped layer embedded into undoped GaAs was studied using proton or helium ion bombardment. The threshold dose for isolation Dth of the d -doped layer was found to be '2 times higher ... -
Electrical isolation of GaN by MeV ion irradiation
(2001) [Journal article]The evolution of sheet resistance of n-type GaN epilayers exposed to irradiation with MeV H, Li, C, and O ions is studied in situ. Results show that the threshold dose necessary for complete isolation linearly depends on ... -
Electrical isolation of InGaP by proton and helium ion irradiation
(2002) [Journal article]Formation of electrical isolation in n- and p-type In0.49Ga0.51P epitaxial layers grown on semi-insulating GaAs substrates was investigated using proton or helium ion irradiation. Sheet resistance increases with the ... -
Electrical isolation of n-type and p-type InP layers by proton bombardment
(2001) [Journal article]The evolution of the sheet resistance (Rs) of n-type and p-type conductive InP layers during proton irradiation and the stability of the formed isolation during postirradiation annealing were investigated. It was found ... -
Electrical isolation of n-type GaAs layers by proton bombardment : effects of the irration temperature
(1998) [Journal article]The electrical isolation in n-type GaAs layers produced by proton irradiation at temperatures from 2100 to 300°C was investigated. The threshold dose for the isolation (Dth) was found almost identical for irradiation at ... -
Electrical isolation of p-type GaAs layers by ion irradiation
(2002) [Journal article]The electrical isolation of p-type GaAs layers doped with acceptor impurities incorporated in the Ga sublattice (Mg) or As sublattice (C) was studied using proton bombardment. It was found that practically the same proton ... -
Electrical magnetotransport properties in RCo12B6 compounds (R = Y, Gd, and Ho)
(2020) [Journal article]Remarkable electronic transport and magnetotransport properties are found in the intermetallic compounds RCo12B6 (R=Y, Ho, and Gd). Detailed resistivity, magnetoresistance, and Hall effect measurements are reported in the ... -
Electrical Resistance and Crystallization Characteristics of Fe/Sub 80/B/Sub 20/a
(1981) [Journal article]The electrical resistance of amorphous Fe80B20 has been measured as a function of time at various temperatures during an isothermal crystallization process. The results fit a universal curve when ∆R/∆R1 is plotted against ... -
Electrical resistivity of acceptor carbon in GaAs
(2004) [Journal article]The electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acceptor carbon in GaAs prepared by ion implantation with impurity concentrations between 1017 and 1019 cm-³. Good agreement ... -
Electrical resistivity of bismuth implanted into silicon
(1996) [Journal article]We investigate the electrical properties of Bi-doped Si samples, prepared by ion implantation, in a range of concentrations around and above the metal–nonmetal transition. Comparison between experimental and theoretical ... -
Electrical stimulation and electromagnetic field use in patients with diabetic neuropathy : systematic review and meta-analysis
(2013) [Journal article]Background: Painful diabetic neuropathy (PDN) is a common complication of diabetes mellitus, and pharmacological therapies are ineffective in many patients. Therefore, other treatment modalities should be considered, ... -
Electric field gradients and impurity distributions in doped noble metals : a systematic study
(1980) [Journal article]The electric field gradients created at 111Cd nuclei by dilute transition-element impurities in noble metais are studied by the technique of time-differential perturbed angular correlation. The present results supplement ... -
Electric-field gradients at the Zr sites in Zr/sub 3/Fe : measured using perturbed-angular-correlation spectroscopy and calculated using band theory
(2002) [Journal article]We have measured the electric-field-gradient (EFG) parameters Vzz and η and their temperature dependences at the two Zr sites in the intermetallic compound Zr₃Fe using perturbed-angular-correlation spectroscopy and the ... -
Electric power grids under high-absenteeism pandemics : history, context, response, and opportunities
(2020) [Journal article]Widespread outbreaks of infectious disease, i.e., the so-called pandemics that may travel quickly and silently beyond boundaries, can significantly upsurge the morbidity and mortality over largescale geographical areas. ... -
Electric quadrupole interactions of /sup 111/cd nuclei in the cubic ag lattice doped with sn impurity
(1976) [Journal article]The electric quadrupole interactions produced by near-neighbor impurity atoms of Sn on 111Cd probe nuclei in a cubic Ag lattice were studied by the time-differential perturbed angular correlation technique. The effects of ... -
Electroacupuncture analgesia is associated with increased serum brain-derived neurotrophic factor in chronic tension-type headache : a randomized, sham controlled, crossover trial
(2015) [Journal article]Background: Chronic tension-type headache (CTTH) is characterized by almost daily headaches and central sensitization, for which electroacupuncture (EA) might be effective. The central nervous system (CNS) plasticity can ...
